SIHD6N62E-GE3

SIHD6N62E-GE3
Mfr. #:
SIHD6N62E-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD6N62E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHD6N62E-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHD6N62, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin DPAK
***i-Key
MOSFET N-CH 620V 6A TO-252
***ark
N-CHANNEL 620V
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 620V, 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:620V; Resistenza di Attivazione Rds(on):0.78ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:78W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD6N62E-GE3
DISTI # 31638809
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant
2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
SIHD6N62E-GE3
DISTI # V99:2348_09218403
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant
2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
  • 1:$1.5349
SIHD6N62E-GE3
DISTI # V36:1790_09218403
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant
0
  • 3000000:$0.6417
  • 1500000:$0.6446
  • 300000:$0.9259
  • 30000:$1.4340
  • 3000:$1.5200
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3-ND
Vishay SiliconixMOSFET N-CH 620V 6A TO-252
Min Qty: 1
Container: Tube
3090In Stock
  • 5000:$0.6259
  • 2500:$0.6588
  • 500:$0.8941
  • 100:$1.0824
  • 25:$1.3176
  • 10:$1.3880
  • 1:$1.5500
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK (Alt: SIHD6N62E-GE3)
Min Qty: 3000
Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6029
  • 18000:$0.6199
  • 12000:$0.6369
  • 6000:$0.6639
  • 3000:$0.6849
SIHD6N62E-GE3
DISTI # 78-SIHD6N62E-GE3
Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
4048
  • 1:$1.5500
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.8940
  • 1000:$0.6580
  • 3000:$0.6250
  • 9000:$0.6020
SIHD6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
Americas -
    SIHD6N62E-GE3
    DISTI # 2400378
    Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant
    0
    • 5025:$0.9840
    • 2550:$1.0400
    • 525:$1.4100
    • 150:$1.7100
    • 75:$2.0700
    • 10:$2.1900
    • 1:$2.4400
    SIHD6N62E-GE3
    DISTI # 2400378
    Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant
    10
    • 5000:£0.5420
    • 1000:£0.5710
    • 500:£0.6830
    • 250:£0.7380
    • 100:£0.7930
    • 10:£1.0800
    • 1:£1.4200
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    MOSFET 650V Vds E Series DPAK TO-252
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    OMO.#: OMO-SIHD6N65E-GE3-VISHAY

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    Mfr.#: SIHD6N62E-GE3

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    RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
    SIHD6N62E-GE3-CUT TAPE

    Mfr.#: SIHD6N62E-GE3-CUT TAPE

    OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

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    OMO.#: OMO-SIHD6N65E-1190

    Nuevo y original
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    OMO.#: OMO-SIHD6N65EGE3-1190

    Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    Mfr.#: SIHD6N65ET4-GE3

    OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY

    MOSFET N-CH 650V 7A TO252AA
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY

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    Mfr.#: SIHD6N80E-GE3

    OMO.#: OMO-SIHD6N80E-GE3-VISHAY

    MOSFET N-CHAN 800V TO-252
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de SIHD6N62E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,85 US$
    0,85 US$
    10
    0,80 US$
    8,04 US$
    100
    0,76 US$
    76,15 US$
    500
    0,72 US$
    359,60 US$
    1000
    0,68 US$
    676,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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