FCP11N60F

Mfr. #:: FCP11N60F
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 600V 11A TO-220
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FCP11N60F Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: FAIRCHILD

categoria de producto: Chips de IC

Serie: SuperFET FRFET

embalaje: Tubo

Unidad de peso: 0.063493 oz

Estilo de montaje: A través del orificio

Paquete-Estuche: TO-220-3

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 125 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 56 ns

Hora de levantarse: 98 ns

Vgs-Puerta-Fuente-Voltaje: 30 V

Id-corriente-de-drenaje-continua: 11 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Resistencia a la fuente de desagüe de Rds: 380 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 119 ns

Tiempo de retardo de encendido típico: 34 ns

Transconductancia directa-Mín.: 9.7 S

Modo de canal: Mejora

Tags: FCP11N60, FCP11N, FCP11, FCP1, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP11N60F Descripción

***Semiconductor: N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220

***p One Stop Global: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail

***Components: MOSFET N-Channel 600V 11A TO220AB

***i-Key: MOSFET N-CH 600V 11A TO-220

***ukat: N-Ch 600V 11A 125W 0,38R TO220

***ser: MOSFETs 600V, NCH MOSFET

***eco: 3 LD PLASTIC W/EXPOSED HEATSNK <AZ

***inecomponents.com: 600V N-Channel SuperFET

***ure Electronics: 600V, NCH MOSFET

***ark: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:12.5mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***th Star Micro: SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FCP11N60F DISTI # V99:2348_06359358	ON Semiconductor	600V N-CHANNEL SUPERFET	300	5000:$1.4630 2000:$1.4769 1000:$1.5550 500:$1.8120 250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # FCP11N60FFS-ND	ON Semiconductor	MOSFET N-CH 600V 11A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.9176 500:$2.2604 100:$2.7745 10:$3.3680 1:$3.7600
FCP11N60F DISTI # 30293559	ON Semiconductor	600V N-CHANNEL SUPERFET	300	250:$2.0040 100:$2.1140 10:$2.4000 4:$2.7620
FCP11N60F DISTI # 31087105	ON Semiconductor	600V N-CHANNEL SUPERFET	100	5000:$1.5236 2000:$1.5360 1000:$1.6128 500:$1.9104 250:$2.1312 100:$2.2464 10:$2.5920
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1	Europe - 250	1:€1.8900 10:€1.6900 25:€1.6900 50:€1.5900 100:€1.4900 500:€1.4900 1000:€1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.4900 2000:$1.4900 4000:$1.4900 6000:$1.4900 10000:$1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000	Asia - 0
FCP11N60F	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2246	1000:$1.9600 500:$2.0600 100:$2.1400 25:$2.2400 1:$2.4100
FCP11N60F DISTI # 512-FCP11N60F	ON Semiconductor	MOSFET 600V NCH MOSFET RoHS: Compliant	104	1:$3.1800 10:$2.7000 100:$2.3400 250:$2.2200 500:$1.9900 1000:$1.6800 2000:$1.6000 5000:$1.5400
FCP11N60F	ON Semiconductor	600 V N-CHANNEL MOSFET ROHS COMPLIANT, TO-220, 3 PIN RoHS: Compliant	Europe - 100
FCP11N60F DISTI # 1228346	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	1:$5.0300 10:$4.2800 100:$3.7100 250:$3.5200 500:$3.1500 1000:$2.6600 2000:$2.5400 5000:$2.4400
FCP11N60F DISTI # C1S541901387354	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	300	250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # C1S226600615369	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	100	100:$2.7300 50:$2.9700 10:$3.6100 1:$5.5700

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Disponibilidad

Valores:: Available
En orden:: 1000
Ingrese la cantidad:

El precio actual de FCP11N60F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,38 US$~~; ~~1,38 US$~~

10: ~~1,32 US$~~; ~~13,15 US$~~

100: ~~1,25 US$~~; ~~124,59 US$~~

500: ~~1,18 US$~~; ~~588,35 US$~~

1000: ~~1,11 US$~~; ~~1 107,50 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

FCP11N60 10
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FCP11N60F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes