PartNumber | FCP110N65F | FCP11N60F | FCP11N60 |
Description | MOSFET SuperFET2 650V, 110mohm | MOSFET 600V NCH MOSFET | MOSFET 600V 11A N-CH |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
Id Continuous Drain Current | 35 A | 11 A | 11 A |
Rds On Drain Source Resistance | 110 mOhms | 380 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 20 V, 30 V | 30 V | 30 V |
Qg Gate Charge | 98 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 357 W | 125 W | 125 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | SuperFET II FRFET | SuperFET FRFET | - |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FCP110N65F | FCP11N60F | FCP11N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 30 S | 9.7 S | 9.7 S |
Fall Time | 5.7 ns | 56 ns | 56 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | 98 ns | 98 ns |
Factory Pack Quantity | 800 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 89 ns | 119 ns | 119 ns |
Typical Turn On Delay Time | 31 ns | 34 ns | 34 ns |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.063493 oz |
Type | - | N-Channel MOSFET | MOSFET |