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FCP190N60E

FCP190N60E
Mfr. #:
FCP190N60E
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V N-CHAN MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCP190N60E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FCP190N60E más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
20.6 A
Rds On - Resistencia de la fuente de drenaje:
190 mOhms
Qg - Carga de puerta:
63 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
208 W
Configuración:
Único
Nombre comercial:
SuperFET II
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FCP190N60E
Tipo de transistor:
1 N-Channel
Escribe:
600 V N-Channel MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
101 ns
Tiempo típico de retardo de encendido:
23 ns
Unidad de peso:
0.063493 oz
Tags
FCP190N60, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**i
    E**i
    ES

    Ok, waiting to prove it.

    2019-06-19
    D***v
    D***v
    RU

    Works fine

    2019-06-21
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP190N60E
***ure Electronics
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 20.6A, TO-220
***i-Key
MOSFET N-CH 600V TO-220-3
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
Parte # Mfg. Descripción Valores Precio
FCP190N60E
DISTI # V99:2348_06359354		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 8000000:$1.2610
  • 80000:$1.4240
  • 800:$1.7330
FCP190N60E
DISTI # FCP190N60E-ND		ON SemiconductorMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.7325
FCP190N60E
DISTI # 31262210		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 5:$1.7330
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.1900
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
FCP190N60E
DISTI # 512-FCP190N60E		ON SemiconductorMOSFET 600V N-CHAN MOSFET
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
FCP190N60E
DISTI # 7729102P		ON SemiconductorMOSFET N-CH 600V 20A SUPERFET-II TO220, TU10
  • 20:£1.3700
FCP190N60EON Semiconductor600 V N-CHANNEL MOSFET
RoHS: Compliant		Europe - 400
    FCP190N60E
    DISTI # C1S541901518194    		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		800
    • 800:$1.7330
    FCP190N60E
    DISTI # 2254234    		ON SemiconductorMOSFET, N-CH, 600V, 20.6A, TO-220
    RoHS: Compliant    		0
    • 1:£2.8400
    • 25:£2.5600
    • 100:£2.4100
    • 250:£2.2800
    • 500:£2.1000
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    Disponibilidad
    Valores:
    255
    En orden:
    2238
    Ingrese la cantidad:
    El precio actual de FCP190N60E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,69 US$
    2,69 US$
    10
    2,28 US$
    22,80 US$
    100
    1,83 US$
    183,00 US$
    500
    1,60 US$
    800,00 US$
    1000
    1,32 US$
    1 320,00 US$
    2500
    1,31 US$
    3 275,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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