STGW30M65DF2

STGW30M65DF2
Mfr. #:
STGW30M65DF2
Fabricante:
STMicroelectronics
Descripción:
TRENCH GATE FIELD-STOP IGBT M SE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW30M65DF2 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
STGW30M65DF2 más información STGW30M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Potencia máxima
258W
Tiempo de recuperación inverso trr
140ns
Colector-corriente-Ic-Max
60A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
Parada de campo de trinchera
Colector de corriente pulsado Icm
120A
Vce-en-Max-Vge-Ic
2V @ 15V, 30A
Energía de conmutación
300μJ (on), 960μJ (off)
Gate-Charge
80nC
Td-encendido-apagado-25 ° C
31.6ns/115ns
Condición de prueba
400V, 30A, 10 Ohm, 15V
Tags
STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGW30M65DF2
DISTI # V99:2348_17623290
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.2420
  • 100:$2.3609
  • 10:$2.7260
  • 1:$3.5167
STGW30M65DF2
DISTI # 497-16485-5-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube
195In Stock
  • 2520:$1.7066
  • 510:$2.1247
  • 120:$2.4959
  • 30:$2.8800
  • 10:$3.0460
  • 1:$3.3900
STGW30M65DF2
DISTI # 25947923
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.1040
  • 100:$2.1980
  • 10:$2.4770
  • 4:$3.1009
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V (Alt: STGW30M65DF2)
RoHS: Compliant
Min Qty: 30
Europe - 600
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 30:€1.6900
  • 60:€1.6900
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V - Tape and Reel (Alt: STGW30M65DF2)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.6900
  • 10000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
STGW30M65DF2
DISTI # 84Y8611
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.5300
STGW30M65DF2.
DISTI # 30AC0855
STMicroelectronicsPTD HIGH VOLTAGE0
  • 6000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1:$1.9900
STGW30M65DF2
DISTI # 511-STGW30M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant
514
  • 1:$3.2200
  • 10:$2.7400
  • 100:$2.3700
  • 250:$2.2500
  • 500:$2.0200
  • 1000:$1.7000
  • 2500:$1.6200
  • 5000:$1.5600
Imagen Parte # Descripción
STGW30NC120HD

Mfr.#: STGW30NC120HD

OMO.#: OMO-STGW30NC120HD

IGBT Transistors N-CHANNEL IGBT
STGW30V60DF

Mfr.#: STGW30V60DF

OMO.#: OMO-STGW30V60DF

IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGW30H65FB

Mfr.#: STGW30H65FB

OMO.#: OMO-STGW30H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGW30N120KD

Mfr.#: STGW30N120KD

OMO.#: OMO-STGW30N120KD

IGBT Transistors 30 A - 1200 V Rugged IGBT
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB-STMICROELECTRONICS

IGBT 600V 60A 260W TO247
STGW30V60DF

Mfr.#: STGW30V60DF

OMO.#: OMO-STGW30V60DF-STMICROELECTRONICS

IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30NC60KD GW30NC60KD

Mfr.#: STGW30NC60KD GW30NC60KD

OMO.#: OMO-STGW30NC60KD-GW30NC60KD-1190

Nuevo y original
STGW30NC60KD,STGW38IH130

Mfr.#: STGW30NC60KD,STGW38IH130

OMO.#: OMO-STGW30NC60KD-STGW38IH130-1190

Nuevo y original
STGW30NC60KD,STGW50NC60W

Mfr.#: STGW30NC60KD,STGW50NC60W

OMO.#: OMO-STGW30NC60KD-STGW50NC60W-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de STGW30M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,30 US$
2,30 US$
10
2,18 US$
21,80 US$
100
2,07 US$
206,55 US$
500
1,95 US$
975,40 US$
1000
1,84 US$
1 836,00 US$
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