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| PartNumber | STGW30H60DFB | STGW30H60DLFB | STGW30H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors 600V 30A High Speed Trench Gate IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 600 V | - | 600 V |
| Collector Emitter Saturation Voltage | 1.55 V | - | 2.4 V |
| Maximum Gate Emitter Voltage | 20 V | - | 20 V |
| Continuous Collector Current at 25 C | 60 A | - | 60 A |
| Pd Power Dissipation | 260 W | - | 260 W |
| Minimum Operating Temperature | - 55 C | - | - 40 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Series | STGW30H60DFB | STGW30H60DLFB | STGW30H60DF |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 30 A | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | - | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 1.340411 oz | 0.229281 oz |