STGW30V60DF

STGW30V60DF
Mfr. #:
STGW30V60DF
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW30V60DF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STGW30V60DF más información STGW30V60DF Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
IGBTs - Single
Serie
600-650V IGBTs
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Configuración
Único
Potencia máxima
258W
Tiempo de recuperación inverso trr
53ns
Colector-corriente-Ic-Max
60A
Voltaje-Colector-Emisor-Ruptura-Máx.
600V
Tipo IGBT
Parada de campo de trinchera
Colector de corriente pulsado Icm
120A
Vce-en-Max-Vge-Ic
2.3V @ 15V, 30A
Energía de conmutación
383μJ (on), 233μJ (off)
Gate-Charge
163nC
Td-encendido-apagado-25 ° C
45ns/189ns
Condición de prueba
400V, 30A, 10 Ohm, 15V
Disipación de potencia Pd
258 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
600 V
Colector-Emisor-Saturación-Voltaje
2.35 V
Corriente-de-colector-continuo-a-25-C
60 A
Puerta-Emisor-Fuga-Corriente
250 nA
Voltaje máximo del emisor de puerta
20 V
Tags
STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247
***ied Electronics & Automation
IGBT Trench gate,600V 30A/100 deg,TO247
***ronik
IGBT 600V 30A 1,85V TO247-3
***i-Key
IGBT 600V 60A 258W TO247
***et
STMICROELECTRONICS STGW30V60DF
***ukat
600V 60A 258W TO247
***ark
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT SINGOLO 600V 60A TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:258W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Parte # Mfg. Descripción Valores Precio
STGW30V60DF
DISTI # 497-13765-5-ND
STMicroelectronicsIGBT 600V 60A 258W TO247
RoHS: Compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$2.3389
STGW30V60DF
DISTI # STGW30V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 (Alt: STGW30V60DF)
RoHS: Compliant
Min Qty: 600
Asia - 0
    STGW30V60DF
    DISTI # STGW30V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 - Rail/Tube (Alt: STGW30V60DF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 600:$1.7900
    • 1200:$1.6900
    • 2400:$1.5900
    • 3600:$1.4900
    • 6000:$1.4900
    STGW30V60DF
    DISTI # STGW30V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 (Alt: STGW30V60DF)
    RoHS: Compliant
    Min Qty: 30
    Europe - 0
    • 30:€2.2900
    • 60:€2.1900
    • 120:€1.9900
    • 180:€1.8900
    • 300:€1.7900
    STGW30V60DF
    DISTI # 45AC7602
    STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 - Bulk (Alt: 45AC7602)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 1:$3.5400
    • 10:$3.0600
    • 25:$2.9400
    • 50:$2.8100
    • 100:$2.6900
    • 250:$2.5700
    • 500:$2.3400
    STGW30V60DF
    DISTI # 45AC7602
    STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:258W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes91
    • 1:$3.5400
    • 10:$3.0600
    • 25:$2.9400
    • 50:$2.8100
    • 100:$2.6900
    • 250:$2.5700
    • 500:$2.3400
    STGW30V60DF
    DISTI # 511-STGW30V60DF
    STMicroelectronicsIGBT Transistors 600V 30A High Speed Trench Gate IGBT
    RoHS: Compliant
    0
    • 1:$3.2100
    • 10:$2.7300
    • 100:$2.3600
    • 250:$2.2400
    • 500:$2.0100
    STGW30V60DF
    DISTI # STGW30V60DF
    STMicroelectronics600V 60A 258W TO247
    RoHS: Not Compliant
    20
    • 5:€2.4500
    • 30:€2.0500
    • 120:€1.8500
    • 300:€1.7800
    STGW30V60DF
    DISTI # IGBT1457
    STMicroelectronicsIGBT 600V 30A 1,85VTO247-3
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 30:$2.2900
    • 60:$2.1600
    • 120:$2.1200
    • 180:$2.0900
    • 300:$1.9600
    STGW30V60DFSTMicroelectronics600V,60A,IGBT with diode5
    • 1:$1.1700
    • 100:$1.1700
    • 500:$1.1700
    • 1000:$1.1700
    STGW30V60DF
    DISTI # 2807174
    STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-247
    RoHS: Compliant
    0
    • 1:£1.3400
    • 10:£1.3300
    • 100:£1.3200
    • 250:£1.3100
    • 500:£1.3000
    Imagen Parte # Descripción
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    OMO.#: OMO-STGW30N90D-STMICROELECTRONICS

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    Mfr.#: STGW30H60DFB

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    Mfr.#: STGW35HF60WD GW35HF60WD

    OMO.#: OMO-STGW35HF60WD-GW35HF60WD-1190

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    Mfr.#: STGW30NC60KD GW30NC60KD

    OMO.#: OMO-STGW30NC60KD-GW30NC60KD-1190

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    Mfr.#: STGW30NB60H

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    Nuevo y original
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    Mfr.#: STGW30NC60KD,STGW38IH130

    OMO.#: OMO-STGW30NC60KD-STGW38IH130-1190

    Nuevo y original
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    Mfr.#: STGW30NC60W

    OMO.#: OMO-STGW30NC60W-STMICROELECTRONICS

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    Mfr.#: STGW39NC60V

    OMO.#: OMO-STGW39NC60V-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de STGW30V60DF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,24 US$
    2,24 US$
    10
    2,12 US$
    21,23 US$
    100
    2,01 US$
    201,15 US$
    500
    1,90 US$
    949,90 US$
    1000
    1,79 US$
    1 788,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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