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IPD50R500CEATMA1

IPD50R500CEATMA1
Mfr. #:
IPD50R500CEATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 550V 24A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD50R500CEATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPD50R500
embalaje
Carrete
Alias ​​de parte
IPD50R500CE SP001117704
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
57 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
24 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
500 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
30 ns
Tiempo de retardo de encendido típico
6 ns
Qg-Gate-Charge
18.7 nC
Tags
IPD50R50, IPD50R5, IPD50R, IPD50, IPD5, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
***el Electronic
MOSFET N-Ch 500V 24A DPAK-2
***i-Key
MOSFET N-CH 500V 7.6A TO252-3
***nell
MOSFET, N-CH, 500V, 7.6A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; Pow
***ark
Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.022uF 25volt X7R +/-5%
***nell
MOSFET, N-CH, 500V, 6.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R
***i-Key Marketplace
COOLMOS N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,7.3A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R
***el Electronic
IC REG LIN 1.5V 3A DDPAK/TO263-5
***r Electronics
Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***emi
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
***ark
REEL / NFET DPAK 600V 5.9A 900
***icroelectronics
N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package
***ure Electronics
N-Channel 400 V 800 mOhm Surface Mount MDmesh II Plus Power Mosfet - DPAK
***nell
POWER MOSFET, N CHANNEL, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***r Electronics
Power Field-Effect Transistor, 6A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Parte # Mfg. Descripción Valores Precio
IPD50R500CEATMA1
DISTI # IPD50R500CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 500V 7.6A PG-TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD50R500CEATMA1
    DISTI # IPD50R500CEATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 500V 7.6A PG-TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD50R500CEATMA1
      DISTI # IPD50R500CEATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 500V 7.6A PG-TO252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        Imagen Parte # Descripción
        IPD50R500CEAUMA1

        Mfr.#: IPD50R500CEAUMA1

        OMO.#: OMO-IPD50R500CEAUMA1

        		 MOSFET CONSUMER
        IPD50R500CEBTMA1

        Mfr.#: IPD50R500CEBTMA1

        OMO.#: OMO-IPD50R500CEBTMA1

        		 MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE
        IPD50R500CE

        Mfr.#: IPD50R500CE

        OMO.#: OMO-IPD50R500CE-1190

        		 MOSFET N-Ch 500V 24A DPAK-2
        IPD50R500CEAUMA1

        Mfr.#: IPD50R500CEAUMA1

        OMO.#: OMO-IPD50R500CEAUMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 550V 7.6A TO252
        IPD50R500CEBTMA1

        Mfr.#: IPD50R500CEBTMA1

        OMO.#: OMO-IPD50R500CEBTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 500V 7.6A PG-TO252
        IPD50R500CEBTMA1 , 2SD22

        Mfr.#: IPD50R500CEBTMA1 , 2SD22

        OMO.#: OMO-IPD50R500CEBTMA1-2SD22-1190

        		 Nuevo y original
        IPD50R500CEATMA1

        Mfr.#: IPD50R500CEATMA1

        OMO.#: OMO-IPD50R500CEATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 550V 24A DPAK-2
        Disponibilidad
        Valores:
        Available
        En orden:
        5500
        Ingrese la cantidad:
        El precio actual de IPD50R500CEATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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