 | |  | |
| PartNumber | IPD50R500CEAUMA1 | IPD50R500CEBTMA1 | IPD50R500CEATMA1 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | MOSFET N-Ch 550V 24A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CE | - | XPD50R500 |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD50R500CE SP001396792 | IPD50R500CE IPD50R500CEXT SP000988424 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Id Continuous Drain Current | - | 7.6 A | - |
| Rds On Drain Source Resistance | - | 500 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 18.7 nC | - |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 57 W | - |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Part Aliases | - | - | IPD50R500CE SP001117704 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 57 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 5 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 24 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 500 mOhms |
| Typical Turn Off Delay Time | - | - | 30 ns |
| Typical Turn On Delay Time | - | - | 6 ns |
| Qg Gate Charge | - | - | 18.7 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50R500CEAUMA1 | MOSFET CONSUMER | |
| IPD50R520CPATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD50R520CPATMA1 | LOW POWER_LEGACY | ||
| IPD50R520CPBTMA1 | LOW POWER_LEGACY | ||
| IPD50R500CEAUMA1 | MOSFET N-CH 550V 7.6A TO252 | ||
| IPD50R500CEBTMA1 | MOSFET N-CH 500V 7.6A PG-TO252 | ||
| IPD50R520CP | MOSFET N-CH 550V 7.1A TO-252 | ||
| IPD50R500CEATMA1 | MOSFET N-Ch 550V 24A DPAK-2 | ||
Infineon Technologies |
IPD50R500CEBTMA1 | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | |
| IPD50R520CP | MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP | ||
| IPD50R500CE | MOSFET N-Ch 500V 24A DPAK-2 | ||
| IPD50R500CEBTMA1 , 2SD22 | Nuevo y original |