IPD50R500CEAUMA1 vs IPD50R500CE vs IPD50R500CEATMA1

 
PartNumberIPD50R500CEAUMA1IPD50R500CEIPD50R500CEATMA1
DescriptionMOSFET CONSUMERMOSFET N-Ch 500V 24A DPAK-2MOSFET N-Ch 550V 24A DPAK-2
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Vds Drain Source Breakdown Voltage500 V--
TradenameCoolMOSCoolMOS-
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CEXPD50R500XPD50R500
Width6.22 mm--
BrandInfineon Technologies--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesIPD50R500CE SP001396792--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Part Aliases-IPD50R500CEATMA1 IPD50R500CEBTMA1 IPD50R500CEXT SP000988424IPD50R500CE SP001117704
Package Case-TO-252-3TO-252-3
Number of Channels-1 Channel1 Channel
Configuration-SingleSingle
Transistor Type-1 N-Channel1 N-Channel
Pd Power Dissipation-57 W57 W
Maximum Operating Temperature-+ 150 C+ 150 C
Vgs Gate Source Voltage-20 V30 V
Id Continuous Drain Current-7.6 A24 A
Vds Drain Source Breakdown Voltage-500 V500 V
Rds On Drain Source Resistance-500 mOhms500 mOhms
Transistor Polarity-N-ChannelN-Channel
Qg Gate Charge-18.7 nC18.7 nC
Minimum Operating Temperature--- 55 C
Fall Time--12 ns
Rise Time--5 ns
Vgs th Gate Source Threshold Voltage--3 V
Typical Turn Off Delay Time--30 ns
Typical Turn On Delay Time--6 ns
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