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Parte # | Mfg. | Descripción | Valores | Precio |
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BSM35GD120DLCE3224BOSA1 DISTI # 29446637 | Infineon Technologies AG | 70 A, 1200 V, N-CHANNEL IGBT RoHS: Compliant | 20 |
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BSM35GD120DLCE3224BOSA1 DISTI # V36:1790_18204606 | Infineon Technologies AG | 70 A, 1200 V, N-CHANNEL IGBT RoHS: Compliant | 20 |
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BSM35GD120DLCE3224 DISTI # SP000100390 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100390) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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BSM35GD120DLCE3224 DISTI # SP000100390 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100390) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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BSM35GD120DLCE3224BOSA1 DISTI # BSM35GD120DLCE3224BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM35GD120DLCE3224BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
BSM35GD120DLCE3224 DISTI # 641-BSM35GD120DLCE32 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 70A | 0 |
Imagen | Parte # | Descripción |
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Mfr.#: BSM35GD120DN2E3224 OMO.#: OMO-BSM35GD120DN2E3224 |
IGBT Modules N-CH 1.2KV 50A | |
Mfr.#: BSM35GD120DN2BOSA1 OMO.#: OMO-BSM35GD120DN2BOSA1-1190 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | |
Mfr.#: BSM35GD120DN2 E3224 OMO.#: OMO-BSM35GD120DN2-E3224-1190 |
Nuevo y original | |
Mfr.#: BSM35GD120DN2E OMO.#: OMO-BSM35GD120DN2E-1190 |
Nuevo y original | |
Mfr.#: BSM35GD120DN2E3224(6) |
Nuevo y original | |
Mfr.#: BSM35GD120DN2E3226 OMO.#: OMO-BSM35GD120DN2E3226-1190 |
Nuevo y original | |
Mfr.#: BSM35GD120DN2_E3226 OMO.#: OMO-BSM35GD120DN2-E3226-1190 |
Nuevo y original | |
Mfr.#: BSM35GD120DN2_E3256 OMO.#: OMO-BSM35GD120DN2-E3256-1190 |
Nuevo y original | |
Mfr.#: BSM35GD120DLCE3224 OMO.#: OMO-BSM35GD120DLCE3224-125 |
IGBT Modules N-CH 1.2KV 70A | |
Mfr.#: BSM35GD120DN2 |
IGBT Modules 1200V 35A 3-PHASE |