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IXFH18N100Q3

IXFH18N100Q3
Mfr. #:
IXFH18N100Q3
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH18N100Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFH18N100Q3 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXFH18N100
embalaje
Tubo
Unidad de peso
0.056438 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
830 W
Temperatura máxima de funcionamiento
+ 150 C
Otoño
13 ns
Hora de levantarse
33 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
18 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Resistencia a la fuente de desagüe de Rds
660 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
37 ns
Qg-Gate-Charge
90 nC
Transconductancia directa-Mín.
16 S
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFH18N100Q3
DISTI # IXFH18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$13.1867
IXFH18N100Q3
DISTI # 747-IXFH18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$16.3900
  • 10:$14.9000
  • 25:$13.7800
  • 50:$12.6800
  • 100:$12.3700
  • 250:$11.3400
  • 500:$10.2900
IXFH18N100Q3
DISTI # 2470016		IXYS CorporationMOSFET, N CHANNEL, 1KV, 18A, TO-247
RoHS: Compliant		0
  • 1:£12.7200
  • 5:£12.4000
  • 10:£10.4200
  • 50:£9.5900
  • 100:£9.3500
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IXFH18N100Q3

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Mfr.#: IXFH180N20X3

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 200V/180A ULTRA JUNCTION X3-CLAS
IXFH18N100Q3

Mfr.#: IXFH18N100Q3

OMO.#: OMO-IXFH18N100Q3-IXYS-CORPORATION

 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IXFH18N100Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
15,44 US$
15,44 US$
10
14,66 US$
146,63 US$
100
13,89 US$
1 389,15 US$
500
13,12 US$
6 559,90 US$
1000
12,35 US$
12 348,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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