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IXFH18N100Q3

IXFH18N100Q3
Mfr. #:
IXFH18N100Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH18N100Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH18N100Q3 DatasheetIXFH18N100Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFH18N100Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
660 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
90 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
830 W
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFH18N100
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
16 S
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
33 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
37 ns
Unidad de peso:
0.056438 oz
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 1KV 18A 3-Pin(3+Tab) TO-247
***trelec
MOSFET, Single - N-Channel, 1kV, 18A, 830W, TO-247
***ark
Mosfet, N-Ch, 1Kv, 18A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:18A; On Resistance Rds(On):0.66Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFH18N100Q3
DISTI # IXFH18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$13.1867
IXFH18N100Q3
DISTI # 747-IXFH18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$16.3900
  • 10:$14.9000
  • 25:$13.7800
  • 50:$12.6800
  • 100:$12.3700
  • 250:$11.3400
  • 500:$10.2900
IXFH18N100Q3
DISTI # 2470016		IXYS CorporationMOSFET, N CHANNEL, 1KV, 18A, TO-247
RoHS: Compliant		0
  • 1:£12.7200
  • 5:£12.4000
  • 10:£10.4200
  • 50:£9.5900
  • 100:£9.3500
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IXFH18N100Q3

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Disponibilidad
Valores:
52
En orden:
2035
Ingrese la cantidad:
El precio actual de IXFH18N100Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
16,39 US$
16,39 US$
10
14,90 US$
149,00 US$
25
13,78 US$
344,50 US$
50
12,68 US$
634,00 US$
100
12,37 US$
1 237,00 US$
250
11,34 US$
2 835,00 US$
500
10,29 US$
5 145,00 US$
1000
9,40 US$
9 400,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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