CGH40006P

CGH40006P
Mfr. #:
CGH40006P
Fabricante:
N/A
Descripción:
RF JFET Transistors DC-6GHz 28V 6W Gain 13dB GaN HEMT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGH40006P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
CGH40006P más información
Atributo del producto
Valor de atributo
Fabricante
Velocidad de lobo / Cree
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
-
Paquete-Estuche
440109
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
13 dB
Clase
-
Potencia de salida
9 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
2 GHz to 6 GHz
Id-corriente-de-drenaje-continua
0.75 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Kit de desarrollo
CGH40006P-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Tensión de corte de fuente de puerta
-
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGH4000, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 6W, RF Power GaN HEMT Pill Package
***i-Key
RF MOSFET HEMT 28V 440109
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Parte # Mfg. Descripción Valores Precio
CGH40006P
DISTI # CGH40006P-ND
WolfspeedRF MOSFET HEMT 28V 440109
RoHS: Compliant
Min Qty: 1
Container: Tube
427In Stock
  • 1:$56.6400
CGH40006P-TB
DISTI # CGH40006P-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40006P
RoHS: Not compliant
Min Qty: 1
Container: Bulk
5In Stock
  • 1:$550.0000
CGH40006P
DISTI # 941-CGH40006P
Cree, Inc.RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
RoHS: Compliant
309
  • 1:$56.6400
CGH40006P-TB
DISTI # 941-CGH40006P-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
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OMO.#: OMO-CGH40010F

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Mfr.#: CGH40120F-TB

OMO.#: OMO-CGH40120F-TB-WOLFSPEED

BOARD DEMO AMP CIRCUIT CGH40120
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Mfr.#: CGH40120F

OMO.#: OMO-CGH40120F-WOLFSPEED

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Mfr.#: CGH40006P

OMO.#: OMO-CGH40006P-WOLFSPEED

RF JFET Transistors DC-6GHz 28V 6W Gain 13dB GaN HEMT
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Mfr.#: CGH40090PP

OMO.#: OMO-CGH40090PP-WOLFSPEED

RF MOSFET HEMT 28V 440199
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Mfr.#: CGH40045F

OMO.#: OMO-CGH40045F-WOLFSPEED

RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
CGH492T350W5L

Mfr.#: CGH492T350W5L

OMO.#: OMO-CGH492T350W5L-CORNELL-DUBILIER-ELECTRONICS

Aluminum Electrolytic Capacitors - Screw Terminal 4900uF 350V-10+50%
CGH402T350X3L

Mfr.#: CGH402T350X3L

OMO.#: OMO-CGH402T350X3L-CORNELL-DUBILIER-ELECTRONICS

Aluminum Electrolytic Capacitors - Screw Terminal 4000uF 350V-10+50%
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de CGH40006P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
84,96 US$
84,96 US$
10
80,71 US$
807,12 US$
100
76,46 US$
7 646,40 US$
500
72,22 US$
36 108,00 US$
1000
67,97 US$
67 968,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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