BSC883N03MS G

BSC883N03MS G
Mfr. #:
BSC883N03MS G
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC883N03MS G Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
BSC883N03
embalaje
Carrete
Alias ​​de parte
BSC883N03MSGATMA1 SP000507418
Estilo de montaje
SMD / SMT
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
7.6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
19 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
3.8 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns
Tiempo de retardo de encendido típico
15 ns
Modo de canal
Mejora
Tags
BSC883N03MSG, BSC883N03M, BSC883, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC883N03MSGATMA1
DISTI # BSC883N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSC883N03MSGATMA1
    DISTI # BSC883N03MSGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BSC883N03MSGATMA1
      DISTI # BSC883N03MSGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BSC883N03MSGATMA1
        DISTI # SP000507418
        Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin TDSON EP (Alt: SP000507418)
        RoHS: Compliant
        Min Qty: 1
        Europe - 0
        • 1:€0.5779
        • 10:€0.4899
        • 25:€0.4369
        • 50:€0.3929
        • 100:€0.3819
        • 500:€0.3719
        • 1000:€0.3649
        BSC883N03MSGInfineon Technologies AGPower Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        73343
        • 1000:$0.3400
        • 500:$0.3600
        • 100:$0.3800
        • 25:$0.3900
        • 1:$0.4200
        BSC883N03MS G
        DISTI # 726-BSC883N03MSG
        Infineon Technologies AGMOSFET N-Ch 30V 19A TDSON-8
        RoHS: Compliant
        0
          BSC883N03MS GInfineon Technologies AG 4777
            Imagen Parte # Descripción
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G

            MOSFET N-Ch 34V 98A TDSON-8
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1

            MOSFET LV POWER MOS
            BSC883N03LS

            Mfr.#: BSC883N03LS

            OMO.#: OMO-BSC883N03LS-1190

            Nuevo y original
            BSC883N03LSG

            Mfr.#: BSC883N03LSG

            OMO.#: OMO-BSC883N03LSG-1190

            Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 17A TDSON-8
            BSC883N03LSGATMA1 , TDZF

            Mfr.#: BSC883N03LSGATMA1 , TDZF

            OMO.#: OMO-BSC883N03LSGATMA1-TDZF-1190

            Nuevo y original
            BSC883N03MSG

            Mfr.#: BSC883N03MSG

            OMO.#: OMO-BSC883N03MSG-1190

            Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03MSGATMA1

            Mfr.#: BSC883N03MSGATMA1

            OMO.#: OMO-BSC883N03MSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 19A TDSON-8
            BSC883N03MS G

            Mfr.#: BSC883N03MS G

            OMO.#: OMO-BSC883N03MS-G-126

            IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G-317

            RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8
            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de BSC883N03MS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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            100
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