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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03MS G DISTI # 726-BSC883N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 19A TDSON-8 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC883N03LSGATMA1 OMO.#: OMO-BSC883N03LSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
|
|
Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC883N03LSG OMO.#: OMO-BSC883N03LSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC883N03LSGATMA1 |
MOSFET N-CH 34V 17A TDSON-8 |
|
|
Mfr.#: BSC883N03LSGATMA1 , TDZF |
Nuevo y original |
|
|
Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC883N03MSGATMA1 |
MOSFET N-CH 34V 19A TDSON-8 |
|
|
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |
|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |
