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IRF8327STRPBF

IRF8327STRPBF
Mfr. #:
IRF8327STRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 30V N-Channel HEXFET Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8327STRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8327STRPBF DatasheetIRF8327STRPBF Datasheet (P4-P6)IRF8327STRPBF Datasheet (P7-P9)IRF8327STRPBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Micro-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
10.9 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
9.2 nC
Pd - Disipación de energía:
42 W
Configuración:
Único
Embalaje:
Carrete
Altura:
1.11 mm
Longitud:
3 mm
Tipo de transistor:
1 N-Channel
Ancho:
3 mm
Marca:
Infineon Technologies
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4800
Subcategoría:
MOSFET
Parte # Alias:
SP001554476
Tags
IRF8327, IRF832, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
***et Europe
Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k
***ical
Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R
***i-Key
MOSFET N-CH 30V 14A DIRECTFET
***ark
Trench_Mosfets Rohs Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Parte # Mfg. Descripción Valores Precio
IRF8327STRPBF
DISTI # 31078839		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R
RoHS: Compliant		4800
  • 4800:$0.7867
IRF8327STRPBF
DISTI # IRF8327STRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 14A SQ
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4800:$0.5150
IRF8327STRPBF
DISTI # IRF8327STRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k (Alt: IRF8327STRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Asia - 0
    IRF8327STRPBF
    DISTI # IRF8327STRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k - Tape and Reel (Alt: IRF8327STRPBF)
    RoHS: Compliant
    Min Qty: 4800
    Container: Reel    		Americas - 0
    • 4800:$0.4539
    • 9600:$0.4489
    • 19200:$0.4479
    • 28800:$0.4459
    • 48000:$0.4449
    IRF8327STRPBF
    DISTI # SP001554476    		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k (Alt: SP001554476)
    RoHS: Compliant
    Min Qty: 4800
    Container: Tape and Reel    		Europe - 0
    • 4800:€0.6519
    • 9600:€0.5339
    • 19200:€0.4889
    • 28800:€0.4519
    • 48000:€0.4189
    IRF8327STRPBF.
    DISTI # 32AC0762    		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
      IRF8327STRPBF
      DISTI # 942-IRF8327STRPBF      		Infineon Technologies AGMOSFET 30V N-Channel HEXFET Power MOSFET
      RoHS: Compliant      		0
      • 1:$1.1600
      • 10:$0.9860
      • 100:$0.7570
      • 500:$0.6690
      • 1000:$0.5280
      • 2500:$0.4690
      • 4800:$0.4690
      • 9600:$0.4510
      Imagen Parte # Descripción
      IRF8327STRPBF

      Mfr.#: IRF8327STRPBF

      OMO.#: OMO-IRF8327STRPBF

      		 MOSFET 30V N-Channel HEXFET Power MOSFET
      IRF832

      Mfr.#: IRF832

      OMO.#: OMO-IRF832-1190

      		 Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220
      IRF8327STR1PBF

      Mfr.#: IRF8327STR1PBF

      OMO.#: OMO-IRF8327STR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A SQ
      IRF8327STRPBF.

      Mfr.#: IRF8327STRPBF.

      OMO.#: OMO-IRF8327STRPBF--1190

      		 TRENCH_MOSFETS ROHS COMPLIANT: YES
      IRF8327STRPBF

      Mfr.#: IRF8327STRPBF

      OMO.#: OMO-IRF8327STRPBF-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET 30V N-Channel HEXFET Power MOSFET
      Disponibilidad
      Valores:
      Available
      En orden:
      1987
      Ingrese la cantidad:
      El precio actual de IRF8327STRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,16 US$
      1,16 US$
      10
      0,99 US$
      9,86 US$
      100
      0,76 US$
      75,70 US$
      500
      0,67 US$
      334,50 US$
      1000
      0,53 US$
      528,00 US$
      2500
      0,47 US$
      1 172,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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