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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC882N03LSGATMA1 DISTI # V36:1790_06384706 | Infineon Technologies AG | OPTIMOS 3 M-SERIES POWER-MOSFET RoHS: Compliant | 0 |
|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Tape and Reel (Alt: BSC882N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC882N03LSGATMA1 DISTI # SP000686916 | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: SP000686916) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC882N03LSGATMA1 DISTI # 68AC4409 | Infineon Technologies AG | TRANSITIONAL MOSFETS,Transistor Polarity:N Channel,Drain Source Voltage Vds:34V,On Resistance Rds(on):4.2mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:-,Transistor Case Style:-,No. of RoHS Compliant: Yes | 5000 |
|
| BSC882N03LS G DISTI # 726-BSC882N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 100A SON-8 RoHS: Compliant | 4998 |
|
| BSC882N03LSGATMA1 | Infineon Technologies AG | Infineon N-Channel Power MOSFET RoHS: Not Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS RoHS: Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS | 5000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G |
MOSFET N-Ch 34V 100A SON-8 |
|
Mfr.#: BSC882N03LS OMO.#: OMO-BSC882N03LS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC882N03LSG OMO.#: OMO-BSC882N03LSG-1190 |
Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) |
|
|
Mfr.#: BSC882N03MS OMO.#: OMO-BSC882N03MS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC882N03MS G OMO.#: OMO-BSC882N03MS-G-1190 |
MOSFET N-Ch 30V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSG OMO.#: OMO-BSC882N03MSG-1190 |
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSGXT OMO.#: OMO-BSC882N03MSGXT-1190 |
Nuevo y original |
|
|
Mfr.#: BSC882N03LSGATMA1 |
MOSFET N-CH TDSON-8 |
|
|
Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 |
