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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5000In Stock |
|
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5000In Stock |
|
| BSC882N03LSG DISTI # BSC882N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC882N03LSGATMA1 DISTI # BSC882N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Tape and Reel (Alt: BSC882N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC882N03LSGATMA1 DISTI # 68AC4409 | Infineon Technologies AG | TRANSITIONAL MOSFETS,Product Range:-,Automotive Qualification Standard:-,MSL:MSL 1 - Unlimited,SVHC:No SVHC (27-Jun-2018) RoHS Compliant: Yes | 5000 |
|
| BSC882N03LS G DISTI # 726-BSC882N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 100A SON-8 RoHS: Compliant | 5000 |
|
| BSC882N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC882N03LSG | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS RoHS: Compliant | 5000 |
|
| BSC882N03LSGATMA1 DISTI # 2781055 | Infineon Technologies AG | TRANSITIONAL MOSFETS RoHS: Compliant | 5000 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
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Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
Nuevo y original |
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Mfr.#: BSC883N03LSGATMA1 , TDZF |
Nuevo y original |
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Mfr.#: BSC884N03MSG OMO.#: OMO-BSC884N03MSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC889N03LSG E8178 OMO.#: OMO-BSC889N03LSG-E8178-1190 |
Nuevo y original |
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Mfr.#: BSC889N03LSGATMA1 |
MOSFET N-CH 30V 45A TDSON-8 |
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Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190 |
Nuevo y original |
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Mfr.#: BSC889N03MSG OMO.#: OMO-BSC889N03MSG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC889N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
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Mfr.#: BSC88ZN03MS OMO.#: OMO-BSC88ZN03MS-1190 |
Nuevo y original |