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FDP6676S

FDP6676S
Mfr. #:
FDP6676S
Fabricante:
Rochester Electronics, LLC
Descripción:
MOSFET 30V N-Ch PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP6676S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FDP6676, FDP667, FDP66, FDP6, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET 30V N-Ch PowerTrench Logic Level
***ser
Not available to order 30V N-Ch PowerTrench
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***icroelectronics
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 30 V 4.7 mO Flange Mount STripFET™ VI DeepGATE™ Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:- RoHS Compliant: Yes
***ure Electronics
Single N-Channel 60 V 7mOhm 70.5nC 80 W STripFET™ VI DeepGATE™ Mosfet -TO-220-3
***icroelectronics
N-channel 60 V, 0.0063 Ohm typ., 77 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
***r Electronics
Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 60V 77A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
N-CHANNEL 55V 0.005 Ohm 80A TO-220 STripFET™ MOSFET
***ure Electronics
N-Channel 55 V 0.0065 Ohm Flange Mount STripFET II MOSFET - TO-220
*** Source Electronics
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 80A TO-220
***enic
55V 80A 300W 6.5m´Î@10V40A 1V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
***r Electronics
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
MOSFET 30V N-Ch PowerTrench Logic Level
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ark
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Dr
***ure Electronics
Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS™ Power Mosfet - TO-220-3
***ow.cn
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
***el Electronic
INFINEON - IPP057N08N3GXKSA1 - MOSFET, N CH, 80A, 80V, PG-TO220-3
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 60 V 4 mOhm 98 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Parte # Mfg. Descripción Valores Precio
FDP6676S
DISTI # 512-FDP6676S		ON SemiconductorMOSFET 30V N-Ch PowerTrench
RoHS: Not compliant		0
    FDP6676SFairchild Semiconductor CorporationPower Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Not Compliant    		1485
    • 1000:$0.9000
    • 500:$0.9400
    • 100:$0.9800
    • 25:$1.0200
    • 1:$1.1000
    FDP6676SFairchild Semiconductor Corporation76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB685
    • 659:$0.8384
    • 306:$0.9113
    • 1:$2.1870
    Imagen Parte # Descripción
    FDP65N06

    Mfr.#: FDP65N06

    OMO.#: OMO-FDP65N06

    		 MOSFET 60V N-Channel MOSFET
    FDP6670AL

    Mfr.#: FDP6670AL

    OMO.#: OMO-FDP6670AL

    		 MOSFET N-Ch PowerTrench Logic Level
    FDP6030L

    Mfr.#: FDP6030L

    OMO.#: OMO-FDP6030L

    		 MOSFET N-Ch PowerTrench Logic Level
    FDP6030

    Mfr.#: FDP6030

    OMO.#: OMO-FDP6030-1190

    		 Nuevo y original
    FDP6035L

    Mfr.#: FDP6035L

    OMO.#: OMO-FDP6035L-1190

    		 MOSFET N-Ch PowerTrench Logic
    FDP603AL

    Mfr.#: FDP603AL

    OMO.#: OMO-FDP603AL-1190

    		 Nuevo y original
    FDP60N20

    Mfr.#: FDP60N20

    OMO.#: OMO-FDP60N20-1190

    		 Nuevo y original
    FDP61N20

    Mfr.#: FDP61N20

    OMO.#: OMO-FDP61N20-ON-SEMICONDUCTOR

    		 MOSFET N-CH 200V 61A TO-220
    FDP61N20PBF

    Mfr.#: FDP61N20PBF

    OMO.#: OMO-FDP61N20PBF-1190

    		 Nuevo y original
    FDP6670,FDP6670AL,

    Mfr.#: FDP6670,FDP6670AL,

    OMO.#: OMO-FDP6670-FDP6670AL--1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de FDP6676S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,26 US$
    1,26 US$
    10
    1,19 US$
    11,95 US$
    100
    1,13 US$
    113,18 US$
    500
    1,07 US$
    534,50 US$
    1000
    1,01 US$
    1 006,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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