FDP65N06

FDP65N06
Mfr. #:
FDP65N06
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 60V N-Channel MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP65N06 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
65 A
Rds On - Resistencia de la fuente de drenaje:
16 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
135 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FDP65N06
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
52 ns
Tipo de producto:
MOSFET
Hora de levantarse:
94 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
98 ns
Tiempo típico de retardo de encendido:
24 ns
Unidad de peso:
0.063493 oz
Tags
FDP6, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 65 A, 60 V, 3-Pin TO-220 ON Semiconductor FDP65N06
***Semiconductor
N-Channel Power MOSFET, UniFETTM, 60 V, 65 A, 16 mΩ, TO-220
***p One Stop Japan
Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Tube
***i-Key
MOSFET N-CH 60V 65A TO-220
***ser
IGBTs 60V N-Channel MOSFET
***inecomponents.com
60V, 65A, NCH MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:65A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 60V, 65A, TO-220; Tran; N CHANNEL MOSFET, 60V, 65A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:2V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***nell
MOSFET, N TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:65A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.016ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:135W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Capacità Ciss Tipica:1670pF; Configurazione Pin:G(1),D(2)S(3); Corrente Id Max:65A; Corrente di Impulso Idm:260A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Modello Case Alternativo:SOT-78B; Resistenza Stato On Max:16mohm; Resistenza Stato On Tipica:13mohm; Resistenza Termica A da Giunzione a Case:0.92°C/W; Temperatura di Esercizio Min:-55°C; Temperatura di Giunzione Tj Max:150°C; Temperatura di Giunzione Tj Min:-55°C; Tensione Vgs Max:2V; Tensione Vgs th Max:4V
Parte # Mfg. Descripción Valores Precio
FDP65N06
DISTI # V36:1790_06359529
ON Semiconductor60V, 65A, NCH MOSFET0
  • 1000:$0.5418
FDP65N06
DISTI # FDP65N06-ND
ON SemiconductorMOSFET N-CH 60V 65A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1125In Stock
  • 5000:$0.7000
  • 3000:$0.7269
  • 1000:$0.7807
  • 100:$1.1469
  • 25:$1.3460
  • 10:$1.4270
  • 1:$1.5900
FDP65N06
DISTI # FDP65N06
ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 417
Container: Bulk
Americas - 0
  • 4170:$0.7399
  • 2085:$0.7589
  • 1251:$0.7689
  • 834:$0.7789
  • 417:$0.7839
FDP65N06
DISTI # FDP65N06
ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.5529
  • 500:€0.5959
  • 100:€0.6459
  • 50:€0.7039
  • 25:€0.7749
  • 10:€0.8609
  • 1:€0.9689
FDP65N06
DISTI # FDP65N06
ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP65N06)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.6169
  • 6000:$0.6319
  • 4000:$0.6409
  • 2000:$0.6489
  • 1000:$0.6529
FDP65N06
DISTI # 04M9106
ON SemiconductorTrans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 04M9106)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 5000:$0.8710
  • 2500:$0.9020
  • 1000:$0.9640
  • 500:$1.1500
  • 100:$1.3100
  • 10:$1.6200
  • 1:$1.8900
FDP65N06
DISTI # 04M9106
ON SemiconductorN CHANNEL MOSFET, 60V, 65A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes64
  • 1:$0.3830
  • 10:$0.3830
  • 100:$0.3830
  • 500:$0.3830
  • 1000:$0.3830
  • 2500:$0.3830
  • 5000:$0.3830
FDP65N06
DISTI # 512-FDP65N06
ON SemiconductorMOSFET 60V N-Channel MOSFET
RoHS: Compliant
1228
  • 1:$1.5700
  • 10:$1.3300
  • 100:$1.0600
  • 500:$0.9360
  • 1000:$0.7750
  • 2000:$0.7220
  • 5000:$0.6950
  • 10000:$0.6680
FDP65N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
17193
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
FDP65N06
DISTI # 8063567
ON SemiconductorMOSFETFAIRCHILDFDP65N06, PK900
  • 500:£0.7400
  • 250:£0.8040
  • 50:£0.9140
  • 25:£1.0300
  • 5:£1.1520
FDP65N06
DISTI # 2118346
ON SemiconductorN CHANNEL MOSFET, 60V, 65A, TO-220
RoHS: Compliant
64
  • 1000:$1.2000
  • 500:$1.4400
  • 100:$1.6400
  • 10:$2.0400
  • 1:$2.4200
FDP65N06,
DISTI # 1324800
ON SemiconductorMOSFET, N TO-2201050
  • 500:£0.6780
  • 250:£0.7240
  • 100:£0.7690
  • 25:£0.9600
  • 5:£1.0500
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Mfr.#: IRF640NPBF

OMO.#: OMO-IRF640NPBF

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PDS5100H-13

Mfr.#: PDS5100H-13

OMO.#: OMO-PDS5100H-13

Schottky Diodes & Rectifiers 5.0A 100V LFF
ISP742RI

Mfr.#: ISP742RI

OMO.#: OMO-ISP742RI

Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS .4A
ISP742RI

Mfr.#: ISP742RI

OMO.#: OMO-ISP742RI-270

Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS .4A
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FDP65N06 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,57 US$
1,57 US$
10
1,33 US$
13,30 US$
100
1,06 US$
106,00 US$
500
0,94 US$
468,00 US$
1000
0,78 US$
775,00 US$
2000
0,72 US$
1 444,00 US$
5000
0,70 US$
3 475,00 US$
10000
0,67 US$
6 680,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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