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FDP6035L

FDP6035L
Mfr. #:
FDP6035L
Fabricante:
Rochester Electronics, LLC
Descripción:
MOSFET N-Ch PowerTrench Logic
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP6035L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FAIRCHILD
categoria de producto
Chips de IC
Tags
FDP6035, FDP603, FDP60, FDP6, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Ch PowerTrench Logic
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
***ical
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube
*** Electronic Components
IGBT Transistors MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI
***el Electronic
INTERSIL ISL55004IBZOperational Amplifier, Quad, 220 MHz, 4 Amplifier, 300 V/s,2.5V to15V, SOIC, 14 Pins
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***icroelectronics
N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET
*** Electronics
STP60NF06 N-Channel MOSFET, 60 A, 60 V STripFET II, 3-Pin TO-220 STMicroelectronics
***ical
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 60 V 16 mO STripFET II Power MosFet - TO-220
***enic
60V 60A 16m´Î@10V30A 110W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P
***r Electronics
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 26 nC OptiMOS™ Power Mosfet - TO-220-3
***ow.cn
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
58 A 100 V 0.0126 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N-CH, 100V, 58A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 58 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.6 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
***ical
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
***ark
Mosfet, N Channel, 60V, 60A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descripción Valores Precio
FDP6035L
DISTI # 512-FDP6035L		ON SemiconductorMOSFET N-Ch PowerTrench Logic
RoHS: Not compliant		0
    FDP6035LFairchild Semiconductor CorporationPower Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		3250
    • 1000:$0.7400
    • 500:$0.7800
    • 100:$0.8100
    • 25:$0.8400
    • 1:$0.9100
    FDP6035LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-220AB10035
    • 1450:$0.6300
    • 801:$0.6900
    • 1:$1.8000
    Imagen Parte # Descripción
    FDP65N06

    Mfr.#: FDP65N06

    OMO.#: OMO-FDP65N06

    		 MOSFET 60V N-Channel MOSFET
    FDP6670AL

    Mfr.#: FDP6670AL

    OMO.#: OMO-FDP6670AL

    		 MOSFET N-Ch PowerTrench Logic Level
    FDP6021P

    Mfr.#: FDP6021P

    OMO.#: OMO-FDP6021P-1190

    		 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
    FDP6030BL

    Mfr.#: FDP6030BL

    OMO.#: OMO-FDP6030BL-ON-SEMICONDUCTOR

    		 MOSFET N-CH 30V 40A TO-220
    FDP6035AL.

    Mfr.#: FDP6035AL.

    OMO.#: OMO-FDP6035AL--1190

    		 Nuevo y original
    FDP6035L,FDP6670AL,FDP66

    Mfr.#: FDP6035L,FDP6670AL,FDP66

    OMO.#: OMO-FDP6035L-FDP6670AL-FDP66-1190

    		 Nuevo y original
    FDP60N20

    Mfr.#: FDP60N20

    OMO.#: OMO-FDP60N20-1190

    		 Nuevo y original
    FDP6670,FDP6670AL,

    Mfr.#: FDP6670,FDP6670AL,

    OMO.#: OMO-FDP6670-FDP6670AL--1190

    		 Nuevo y original
    FDP6676_M

    Mfr.#: FDP6676_M

    OMO.#: OMO-FDP6676-M-1190

    		 Nuevo y original
    FDP6690

    Mfr.#: FDP6690

    OMO.#: OMO-FDP6690-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de FDP6035L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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