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HGTG12N60A4

HGTG12N60A4
Mfr. #:
HGTG12N60A4
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 54A 167W TO247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG12N60A4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTG12N60A4 DatasheetHGTG12N60A4 Datasheet (P4-P6)HGTG12N60A4 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTG12N60A, HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
***o-Tech
Trans IGBT Chip N-CH 600V 54A 3-TO-247
***i-Key
IGBT 600V 54A 167W TO247
***ark
SINGLE IGBT, 600V, 54A; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150�C; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Parte # Mfg. Descripción Valores Precio
HGTG12N60A4D
DISTI # V99:2348_06359064		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail265
  • 500:$2.2090
  • 250:$2.4550
  • 100:$2.5410
  • 50:$2.8230
  • 25:$3.1370
  • 10:$3.2320
  • 1:$4.0502
HGTG12N60A4D
DISTI # V36:1790_06359064		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail57
  • 500:$2.2090
  • 250:$2.4550
  • 100:$2.5410
  • 50:$2.8230
  • 25:$3.1370
  • 10:$3.2320
  • 1:$4.0502
HGTG12N60A4D
DISTI # HGTG12N60A4D-ND		ON SemiconductorIGBT 600V 54A 167W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		277In Stock
  • 5400:$1.3163
  • 2700:$1.3327
  • 900:$1.7276
  • 450:$1.9744
  • 25:$2.4680
  • 10:$2.6160
  • 1:$2.9100
HGTG12N60A4
DISTI # HGTG12N60A4-ND		ON SemiconductorIGBT 600V 54A 167W TO247
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    HGTG12N60A4D
    DISTI # 30302967    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail265
    • 5:$4.0502
    HGTG12N60A4D
    DISTI # 33650743    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail57
    • 5:$4.0502
    HGTG12N60A4D
    DISTI # HGTG12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60A4D)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Americas - 420
    • 150:$1.3900
    • 300:$1.3900
    • 60:$1.4900
    • 90:$1.4900
    • 30:$1.5900
    HGTG12N60A4
    DISTI # HGTG12N60A4    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60A4)
    RoHS: Compliant
    Min Qty: 186
    Container: Bulk    		Americas - 0
    • 1860:$1.5900
    • 186:$1.6900
    • 372:$1.6900
    • 558:$1.6900
    • 930:$1.6900
    HGTG12N60A4D
    DISTI # HGTG12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.0149
    • 500:€1.0529
    • 100:€1.0929
    • 50:€1.1369
    • 25:€1.1849
    • 10:€1.2919
    • 1:€1.4219
    HGTG12N60A4D
    DISTI # HGTG12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60A4D)
    RoHS: Compliant
    Min Qty: 175
    Container: Bulk    		Americas - 0
    • 1750:$1.6900
    • 175:$1.7900
    • 350:$1.7900
    • 525:$1.7900
    • 875:$1.7900
    HGTG12N60A4D
    DISTI # HGTG12N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D)
    RoHS: Compliant
    Min Qty: 450    		Asia - 0
    • 22500:$1.9667
    • 11250:$2.0000
    • 4500:$2.0345
    • 2250:$2.1071
    • 1350:$2.1852
    • 900:$2.2692
    • 450:$2.3600
    HGTG12N60A4D
    DISTI # 58K1585    		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1585)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$3.0200
    • 250:$3.1900
    • 100:$3.3500
    • 50:$3.5200
    • 25:$3.6800
    • 10:$3.8500
    • 1:$4.2800
    HGTG12N60A4
    DISTI # 95B2565    		ON SemiconductorSINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 500:$1.8100
    • 250:$1.8700
    • 100:$2.2200
    • 50:$2.5600
    • 25:$2.7400
    • 10:$3.1200
    • 1:$3.6100
    HGTG12N60A4D.
    DISTI # 84AC1732    		ON SemiconductorPT P TO247 600V SMPS ROHS COMPLIANT: YES420
    • 500:$3.0200
    • 250:$3.1900
    • 100:$3.3500
    • 50:$3.5200
    • 25:$3.7600
    • 10:$3.9300
    • 1:$4.3700
    HGTG12N60A4D
    DISTI # 58K1585    		ON SemiconductorIGBT, 600V,54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes358
    • 500:$3.0200
    • 250:$3.1900
    • 100:$3.3500
    • 50:$3.5200
    • 25:$3.6800
    • 10:$3.8500
    • 1:$4.2800
    HGTG12N60A4D
    DISTI # 05M3502    		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 RoHS Compliant: Yes15570
    • 500:$1.7500
    • 250:$1.8100
    • 100:$2.1600
    • 50:$2.4900
    • 25:$2.6600
    • 10:$3.0300
    • 1:$3.5000
    HGTG12N60A4
    DISTI # 512-HGTG12N60A4    		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
    RoHS: Compliant    		0
      HGTG12N60A4D
      DISTI # 512-HGTG12N60A4D      		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant      		0
        HGTG12N60A4DON Semiconductor 
        RoHS: Not Compliant        		2070
        • 1000:$1.2500
        • 500:$1.3200
        • 100:$1.3700
        • 25:$1.4300
        • 1:$1.5400
        HGTG12N60A4Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
        RoHS: Compliant        		3294
        • 1000:$1.7800
        • 500:$1.8700
        • 100:$1.9500
        • 25:$2.0300
        • 1:$2.1900
        HGTG12N60A4HARTING Technology Group 30
          HGTG12N60A4DHarris Semiconductor 10
            HGTG12N60A4D
            DISTI # HGTG12N60A4D            		ON SemiconductorTransistor: IGBT,600V,23A,167W,TO247-3476
            • 150:$1.4500
            • 30:$1.7100
            • 10:$1.8800
            • 3:$2.2100
            • 1:$2.3500
            HGTG12N60A4D
            DISTI # XSKDRABS0006133            		ON SEMICONDUCTOR 
            RoHS: Compliant            		2544 in Stock0 on Order
            • 2544:$2.1300
            • 450:$2.2900
            HGTG12N60A4D
            DISTI # 1057677            		ON SemiconductorIGBT, TO-24718608
            • 500:£1.9000
            • 250:£2.1200
            • 100:£2.4200
            • 10:£2.7200
            • 1:£3.4100
            HGTG12N60A4D
            DISTI # 1057677            		ON SemiconductorIGBT, TO-247
            RoHS: Compliant            		19341
            • 1350:$3.0500
            • 900:$3.6200
            • 450:$4.0300
            • 10:$5.1900
            • 1:$5.7700
            Imagen Parte # Descripción
            HGTG10N120BND

            Mfr.#: HGTG10N120BND

            OMO.#: OMO-HGTG10N120BND-ON-SEMICONDUCTOR

            		 IGBT 1200V 35A 298W TO247
            HGTG10N120

            Mfr.#: HGTG10N120

            OMO.#: OMO-HGTG10N120-1190

            		 Nuevo y original
            HGTG10N120BNS

            Mfr.#: HGTG10N120BNS

            OMO.#: OMO-HGTG10N120BNS-1190

            		 Nuevo y original
            HGTG11N120

            Mfr.#: HGTG11N120

            OMO.#: OMO-HGTG11N120-1190

            		 Nuevo y original
            HGTG11N120CNP

            Mfr.#: HGTG11N120CNP

            OMO.#: OMO-HGTG11N120CNP-1190

            		 Nuevo y original
            HGTG120N60B3D

            Mfr.#: HGTG120N60B3D

            OMO.#: OMO-HGTG120N60B3D-1190

            		 Nuevo y original
            HGTG12N60A4D-NL

            Mfr.#: HGTG12N60A4D-NL

            OMO.#: OMO-HGTG12N60A4D-NL-1190

            		 Nuevo y original
            HGTG18N120BND,18N120BND

            Mfr.#: HGTG18N120BND,18N120BND

            OMO.#: OMO-HGTG18N120BND-18N120BND-1190

            		 Nuevo y original
            HGTG11N120CND--

            Mfr.#: HGTG11N120CND--

            OMO.#: OMO-HGTG11N120CND---1190

            		 Nuevo y original
            HGTG12N60C3DR

            Mfr.#: HGTG12N60C3DR

            OMO.#: OMO-HGTG12N60C3DR-1190

            		 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
            Disponibilidad
            Valores:
            Available
            En orden:
            3500
            Ingrese la cantidad:
            El precio actual de HGTG12N60A4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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