We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| HGTG10N120BND DISTI # 32727600 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 25200 |
|
| HGTG10N120BND DISTI # 31229239 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 476 |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 807In Stock |
|
| HGTG10N120BND DISTI # V36:1790_06359369 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 0 | |
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 796 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 50Tube |
|
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 326 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 | |
| HGTG10N120BND DISTI # XSFP00000002029 | Fairchild Semiconductor Corporation | N-Channel 60 V 17.2 A 42 mOhm QFET Mosfet - I-PAK-3 RoHS: Compliant | 1218 in Stock0 on Order |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: HGTG12N60C3D OMO.#: OMO-HGTG12N60C3D |
IGBT Transistors 24a 600V IGBT UFS N-Channel |
|
Mfr.#: HGTG12N60C3D |
IGBT Transistors 24a 600V IGBT UFS N-Channel |
|
Mfr.#: HGTG10N120 OMO.#: OMO-HGTG10N120-1190 |
Nuevo y original |
|
|
Mfr.#: HGTG10N120BND 10N120BND |
Nuevo y original |
|
|
Mfr.#: HGTG10N120BNS OMO.#: OMO-HGTG10N120BNS-1190 |
Nuevo y original |
|
|
Mfr.#: HGTG11N120CND? OMO.#: OMO-HGTG11N120CND--1190 |
NPTPIGBT TO247 43A 1200V |
|
|
Mfr.#: HGTG12N60A4D-NL OMO.#: OMO-HGTG12N60A4D-NL-1190 |
Nuevo y original |
|
|
Mfr.#: HGTG12N60D1 OMO.#: OMO-HGTG12N60D1-1190 |
Nuevo y original |
|
|
Mfr.#: HGTG18N120BN G18N120BN |
Nuevo y original |
|
|
Mfr.#: HGTG12N60C3DR OMO.#: OMO-HGTG12N60C3DR-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel |