HGTG12N60C3DR

HGTG12N60C3DR
Mfr. #:
HGTG12N60C3DR
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG12N60C3DR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
UFS SERIES N-CHANNEL IGBT
Parte # Mfg. Descripción Valores Precio
HGTG12N60C3DRHarris Semiconductor24A, 600V, RUGGED, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE
RoHS: Not Compliant
659
  • 1000:$2.0400
  • 500:$2.1400
  • 100:$2.2300
  • 25:$2.3300
  • 1:$2.5100
Imagen Parte # Descripción
HGTG12N60A4D

Mfr.#: HGTG12N60A4D

OMO.#: OMO-HGTG12N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG120N60B3D

Mfr.#: HGTG120N60B3D

OMO.#: OMO-HGTG120N60B3D-1190

Nuevo y original
HGTG12N60A4

Mfr.#: HGTG12N60A4

OMO.#: OMO-HGTG12N60A4-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO247
HGTG12N60A4D,12N60A4D,12

Mfr.#: HGTG12N60A4D,12N60A4D,12

OMO.#: OMO-HGTG12N60A4D-12N60A4D-12-1190

Nuevo y original
HGTG12N60A4D,HGTG10N120B

Mfr.#: HGTG12N60A4D,HGTG10N120B

OMO.#: OMO-HGTG12N60A4D-HGTG10N120B-1190

Nuevo y original
HGTG12N60A4D,HGTG10N120BND,

Mfr.#: HGTG12N60A4D,HGTG10N120BND,

OMO.#: OMO-HGTG12N60A4D-HGTG10N120BND--1190

Nuevo y original
HGTG12N60A4D-NL

Mfr.#: HGTG12N60A4D-NL

OMO.#: OMO-HGTG12N60A4D-NL-1190

Nuevo y original
HGTG12N60A4_NL

Mfr.#: HGTG12N60A4_NL

OMO.#: OMO-HGTG12N60A4-NL-1190

Nuevo y original
HGTG12N60B3

Mfr.#: HGTG12N60B3

OMO.#: OMO-HGTG12N60B3-ON-SEMICONDUCTOR

IGBT 600V 27A 104W TO247
HGTG12N60C3DR

Mfr.#: HGTG12N60C3DR

OMO.#: OMO-HGTG12N60C3DR-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de HGTG12N60C3DR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,06 US$
3,06 US$
10
2,91 US$
29,07 US$
100
2,75 US$
275,40 US$
500
2,60 US$
1 300,50 US$
1000
2,45 US$
2 448,00 US$
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