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SIHD12N50E-GE3

SIHD12N50E-GE3
Mfr. #:
SIHD12N50E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD12N50E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD12N50E-GE3 DatasheetSIHD12N50E-GE3 Datasheet (P4-P6)SIHD12N50E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHD12N50E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
10.5 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
25 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
114 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
A granel
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
29 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.050717 oz
Tags
SIHD12, SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-252-3
***ark
MOSFET, N-CH, 500V, 10.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 500V, 10.5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***icroelectronics
Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package
***ure Electronics
Single N-Channel 500 V 0.32 Ohm 27 nC 90 W Silicon SMT Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N CH, 500V, 12A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET
***et
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3
***ark
MOSFET, N CH, 600V, 8A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
D Series 500 V 5.3 A 1.5 Ohm Single N-Channel Power MOSFET - TO-252
***ical
Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK
***el Electronic
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
*** International
MOSFET N-CH 500V 5.3A TO252 DPK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 500V, 5.3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 500V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ark
Mosfet Transistor, N Channel, 6 A, 500 V, 0.76 Ohm, 10 V, 5 V
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, DPAK
***ment14 APAC
MOSFET, N-CH, 500V, 6A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:500V; On Resistance
***nsix Microsemi
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
N-Channel 500 V 600 mOhm 32 nC CoolMOS™ Power Mosfet - PG-TO252-3-1
*** Source Electronics
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 500V DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5455In Stock
  • 1000:$0.9251
  • 500:$1.1165
  • 100:$1.4355
  • 10:$1.7860
  • 1:$1.9800
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.8439
  • 6000:$0.8189
  • 12000:$0.7849
  • 18000:$0.7639
  • 30000:$0.7429
SIHD12N50E-GE3
DISTI # 43Y2396		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes3879
  • 1:$1.8100
  • 10:$1.5000
  • 25:$1.3900
  • 50:$1.2700
  • 100:$1.1600
  • 250:$1.0900
  • 500:$1.0200
SIHD12N50E-GE3
DISTI # 78-SIHD12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3430
  • 1:$1.8100
  • 10:$1.5000
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.9680
  • 3000:$0.9670
SIHD12N50EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		Europe - 3000
    SIHD12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		Americas -
      SIHD12N50E-GE3
      DISTI # 2471940      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		3936
      • 5:£1.4000
      • 25:£1.1500
      • 100:£0.8870
      • 250:£0.8330
      • 500:£0.7790
      SIHD12N50E-GE3
      DISTI # 2471940      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		3879
      • 1:$2.8700
      • 10:$2.3800
      • 100:$1.8400
      • 500:$1.6200
      • 1000:$1.5400
      SIHD12N50E-GE3
      DISTI # 2471940RL      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.3800
      • 100:$1.8400
      • 500:$1.6200
      • 1000:$1.5400
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      Disponibilidad
      Valores:
      Available
      En orden:
      1986
      Ingrese la cantidad:
      El precio actual de SIHD12N50E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,80 US$
      1,80 US$
      10
      1,49 US$
      14,90 US$
      100
      1,16 US$
      116,00 US$
      500
      1,01 US$
      505,00 US$
      1000
      0,84 US$
      841,00 US$
      3000
      0,78 US$
      2 352,00 US$
      6000
      0,76 US$
      4 530,00 US$
      9000
      0,72 US$
      6 525,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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