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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC080N03LSGATMA1 DISTI # V72:2272_06390942 | Infineon Technologies AG | Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant | 3336 |
|
| BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC080N03LSGATMA1 DISTI # 31003332 | Infineon Technologies AG | Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant | 3336 |
|
| BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC080N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC080N03LSGATMA1 DISTI # 50Y1805 | Infineon Technologies AG | MOSFET Transistor, N Channel, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V RoHS Compliant: Yes | 439 |
|
| BSC080N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4500 |
|
| BSC080N03LSGATMA1 DISTI # 726-BSC080N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 RoHS: Compliant | 6236 |
|
| BSC080N03LS G DISTI # 726-BSC080N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 RoHS: Compliant | 4403 |
|
| BSC080N03LSGATMA1 DISTI # 7528160P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 14A OPTIMOS3 TDSON8, RL | 1910 |
|
| BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,43A,35W,PG-TDSON-8 | 2937 |
|
| BSC080N03LSGATMA1 DISTI # 2480740 | Infineon Technologies AG | MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant | 699 |
|
| BSC080N03LSGATMA1 DISTI # 2480740 | Infineon Technologies AG | MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant | 439 |
|
| BSC080N03LSGATMA1 DISTI # 2480740RL | Infineon Technologies AG | MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC080N03LSGATMA1 DISTI # C1S322000207143 | Infineon Technologies AG | Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant | 3336 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC080N03LSGATMA1 OMO.#: OMO-BSC080N03LSGATMA1 |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC080N03MS G OMO.#: OMO-BSC080N03MS-G |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC080N03MSGATMA1 OMO.#: OMO-BSC080N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC080N03LS OMO.#: OMO-BSC080N03LS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC080N03LS G OMO.#: OMO-BSC080N03LS-G-1190 |
Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G) |
|
|
Mfr.#: BSC080N03LSG OMO.#: OMO-BSC080N03LSG-1190 |
14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
Mfr.#: BSC080N03LSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03MSG OMO.#: OMO-BSC080N03MSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC080N03MSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03LSGATMA1-CUT TAPE |
Nuevo y original |
