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BSC080N03MSGATMA1

BSC080N03MSGATMA1
Mfr. #:
BSC080N03MSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC080N03MSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Ancho:
5.15 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Subcategoría:
MOSFET
Parte # Alias:
BSC080N03MS BSC8N3MSGXT G SP000311514
Tags
BSC080N03M, BSC080N, BSC080, BSC08, BSC0, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 8 mOhm 21 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Parte # Mfg. Descripción Valores Precio
BSC080N03MSGATMA1
DISTI # V72:2272_06390943		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2529
  • 1000:$0.2728
  • 500:$0.3105
  • 250:$0.3369
  • 100:$0.3609
  • 25:$0.4357
  • 10:$0.4454
  • 1:$0.5234
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC080N03MSGATMA1
DISTI # 31084156		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2544
  • 1000:$0.2745
  • 500:$0.3114
  • 250:$0.3342
  • 100:$0.3579
  • 32:$0.4327
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSC080N03MSGATMA1
DISTI # 60R2503		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    BSC080N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2200
    • 500:$0.2400
    • 100:$0.2500
    • 25:$0.2600
    • 1:$0.2800
    BSC080N03MS G
    DISTI # 726-BSC080N03MSG    		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
    RoHS: Compliant    		0
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC080N03MSGATMA1
    DISTI # 7545288P    		Infineon Technologies AGMOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL1620
    • 25:£0.1560
    BSC080N03MSGATMA1
    DISTI # BSC080N03MSGATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8550
    • 3:$0.4264
    • 25:$0.3763
    • 100:$0.3156
    • 250:$0.2732
    • 1000:$0.2537
    BSC080N03MSGATMA1
    DISTI # 1775456    		Infineon Technologies AGMOSFET, N CH, 53A, 30V, PG-TDSON-8
    RoHS: Compliant    		0
    • 1:$1.0800
    • 10:$0.8900
    • 100:$0.5750
    • 1000:$0.4610
    • 5000:$0.3900
    BSC080N03MSGATMA1
    DISTI # C1S322000595914    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		5000
    • 250:$0.3443
    • 100:$0.3708
    • 25:$0.4437
    • 10:$0.4539
    Imagen Parte # Descripción
    BSC080N03LSGATMA1

    Mfr.#: BSC080N03LSGATMA1

    OMO.#: OMO-BSC080N03LSGATMA1

    		 MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
    BSC080N03MS G

    Mfr.#: BSC080N03MS G

    OMO.#: OMO-BSC080N03MS-G

    		 MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
    BSC080N03MSGATMA1

    Mfr.#: BSC080N03MSGATMA1

    OMO.#: OMO-BSC080N03MSGATMA1

    		 MOSFET LV POWER MOS
    BSC080N03LS

    Mfr.#: BSC080N03LS

    OMO.#: OMO-BSC080N03LS-1190

    		 Nuevo y original
    BSC080N03LS G

    Mfr.#: BSC080N03LS G

    OMO.#: OMO-BSC080N03LS-G-1190

    		 Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
    BSC080N03LSGATMA1

    Mfr.#: BSC080N03LSGATMA1

    OMO.#: OMO-BSC080N03LSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 53A TDSON-8
    BSC080N03MSG

    Mfr.#: BSC080N03MSG

    OMO.#: OMO-BSC080N03MSG-1190

    		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC080N03MSGATMA1

    Mfr.#: BSC080N03MSGATMA1

    OMO.#: OMO-BSC080N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 53A TDSON-8
    BSC080N03NMS

    Mfr.#: BSC080N03NMS

    OMO.#: OMO-BSC080N03NMS-1190

    		 Nuevo y original
    BSC080N03LSGATMA1-CUT TAPE

    Mfr.#: BSC080N03LSGATMA1-CUT TAPE

    OMO.#: OMO-BSC080N03LSGATMA1-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de BSC080N03MSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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