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BSC080N03MSG

BSC080N03MSG
Mfr. #:
BSC080N03MSG
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC080N03MSG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INF
categoria de producto
FET - Single
Tags
BSC080N03M, BSC080N, BSC080, BSC08, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC080N03MSGATMA1
DISTI # V72:2272_06390943		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2539
  • 1000:$0.2752
  • 500:$0.3162
  • 250:$0.3443
  • 100:$0.3708
  • 25:$0.4437
  • 10:$0.4539
  • 1:$0.5278
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		779In Stock
  • 1000:$0.3641
  • 500:$0.4463
  • 100:$0.5901
  • 10:$0.7540
  • 1:$0.8600
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		779In Stock
  • 1000:$0.3641
  • 500:$0.4463
  • 100:$0.5901
  • 10:$0.7540
  • 1:$0.8600
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3037
BSC080N03MSGATMA1
DISTI # 31084156		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2539
  • 1000:$0.2752
  • 500:$0.3162
  • 250:$0.3443
  • 100:$0.3708
  • 32:$0.4437
BSC080N03MS G
DISTI # BSC080N03MS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC080N03MSGATMA1
    DISTI # BSC080N03MSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.2079
    • 10000:$0.2009
    • 20000:$0.1939
    • 30000:$0.1869
    • 50000:$0.1839
    BSC080N03MSGATMA1
    DISTI # SP000311514    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP (Alt: SP000311514)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.3379
    • 10:€0.2869
    • 25:€0.2549
    • 50:€0.2299
    • 100:€0.2229
    • 500:€0.2169
    • 1000:€0.2129
    BSC080N03MSGATMA1
    DISTI # 60R2503    		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 500:$0.3270
    • 1000:$0.2910
    BSC080N03MS G
    DISTI # 726-BSC080N03MSG    		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
    RoHS: Compliant    		0
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    • 5000:$0.2450
    BSC080N03MSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		9791
    • 1000:$0.2700
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3300
    BSC080N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    BSC080N03MSGATMA1
    DISTI # 7545288P    		Infineon Technologies AGMOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL1625
    • 25:£0.1960
    BSC080N03MSGATMA1
    DISTI # BSC080N03MSGATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8550
    • 3:$0.4223
    • 25:$0.3726
    • 100:$0.3126
    • 250:$0.2705
    • 1000:$0.2512
    BSC080N03MSGInfineon Technologies AGINSTOCK114
      BSC080N03MSGInfineon Technologies AG30V,8m,53A,N-Channel Power MOSFET100
      • 1:$0.4200
      • 100:$0.3500
      • 500:$0.3100
      • 1000:$0.3000
      BSC080N03MSGATMA1
      DISTI # 1775456      		Infineon Technologies AGMOSFET, N CH, 53A, 30V, PG-TDSON-8
      RoHS: Compliant      		0
      • 1:$1.0800
      • 10:$0.8900
      • 100:$0.5750
      • 1000:$0.4610
      • 5000:$0.3880
      • 10000:$0.3870
      Imagen Parte # Descripción
      BSC080N03MS G

      Mfr.#: BSC080N03MS G

      OMO.#: OMO-BSC080N03MS-G

      		 MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
      BSC080P03LS G

      Mfr.#: BSC080P03LS G

      OMO.#: OMO-BSC080P03LS-G

      		 MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P
      BSC080N03MSGATMA1

      Mfr.#: BSC080N03MSGATMA1

      OMO.#: OMO-BSC080N03MSGATMA1

      		 MOSFET LV POWER MOS
      BSC080N03LS

      Mfr.#: BSC080N03LS

      OMO.#: OMO-BSC080N03LS-1190

      		 Nuevo y original
      BSC080N03LS G

      Mfr.#: BSC080N03LS G

      OMO.#: OMO-BSC080N03LS-G-1190

      		 Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
      BSC080N03LSG

      Mfr.#: BSC080N03LSG

      OMO.#: OMO-BSC080N03LSG-1190

      		 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
      BSC080N03NMS

      Mfr.#: BSC080N03NMS

      OMO.#: OMO-BSC080N03NMS-1190

      		 Nuevo y original
      BSC080P03LS

      Mfr.#: BSC080P03LS

      OMO.#: OMO-BSC080P03LS-1190

      		 Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC080P03LSG

      Mfr.#: BSC080P03LSG

      OMO.#: OMO-BSC080P03LSG-1190

      		 Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G)
      BSC080P03LSGAUMA1

      Mfr.#: BSC080P03LSGAUMA1

      OMO.#: OMO-BSC080P03LSGAUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET P-CH 30V 30A TDSON-8
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de BSC080N03MSG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,36 US$
      0,36 US$
      10
      0,34 US$
      3,42 US$
      100
      0,32 US$
      32,40 US$
      500
      0,31 US$
      153,00 US$
      1000
      0,29 US$
      288,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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