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CGHV1F025S

CGHV1F025S
Mfr. #:
CGHV1F025S
Fabricante:
N/A
Descripción:
RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGHV1F025S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGHV1F025S más información
Atributo del producto
Valor de atributo
Fabricante:
Skyworks
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
pHEMT
Tecnología:
GaAs
Polaridad del transistor:
Canal N
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-70-4
Embalaje:
Carrete
Marca:
Skyworks Solutions, Inc.
NF - Figura de ruido:
0.4 dB
P1dB - Punto de compresión:
10.5 dBm
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Tags
CGHV1F, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V 12DFN
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descripción Valores Precio
CGHV1F025S-AMP1
DISTI # CGHV1F025S-AMP1-ND		WolfspeedDEMO HEMT TRANS AMP1 CGHV1F025S
RoHS: Compliant
Min Qty: 1
Container: Bulk		1In Stock
  • 1:$637.4400
CGHV1F025S
DISTI # CGHV1F025STR-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$87.4405
CGHV1F025S
DISTI # CGHV1F025SCT-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$96.1846
  • 1:$97.9300
CGHV1F025S
DISTI # CGHV1F025SDKR-ND		WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$96.1846
  • 1:$97.9300
CGHV1F025S
DISTI # 941-CGHV1F025S		Cree, Inc.RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
RoHS: Compliant		0
  • 1:$87.4400
CGHV1F025S-AMP1
DISTI # 941-CGHV1F025S-AMP1		Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant		1
  • 1:$637.4400
Imagen Parte # Descripción
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Mfr.#: CG2H40010F

OMO.#: OMO-CG2H40010F

 RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F

 RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
CGHV1F006S

Mfr.#: CGHV1F006S

OMO.#: OMO-CGHV1F006S

 RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
CGHV40030F

Mfr.#: CGHV40030F

OMO.#: OMO-CGHV40030F

 RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
CG2H40010F

Mfr.#: CG2H40010F

OMO.#: OMO-CG2H40010F-WOLFSPEED

 RF MOSFET HEMT 28V 440166
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F-WOLFSPEED

 RF MOSFET HEMT 28V 440166
CGHV1F006S

Mfr.#: CGHV1F006S

OMO.#: OMO-CGHV1F006S-WOLFSPEED

 RF MOSFET HEMT 40V 12DFN
CGHV40030F

Mfr.#: CGHV40030F

OMO.#: OMO-CGHV40030F-WOLFSPEED

 RF MOSFET HEMT 50V 440166
Disponibilidad
Valores:
248
En orden:
2231
Ingrese la cantidad:
El precio actual de CGHV1F025S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
83,30 US$
83,30 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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