CGHV1F006S

CGHV1F006S
Mfr. #:
CGHV1F006S
Fabricante:
N/A
Descripción:
RF MOSFET HEMT 40V 12DFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGHV1F006S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
CGHV1F006S más información
Atributo del producto
Valor de atributo
Fabricante
Velocidad de lobo / Cree
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 40 C to + 150 C
Paquete-Estuche
DFN-12
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
16 dB
Clase
-
Potencia de salida
6 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
18 GHz
Id-corriente-de-drenaje-continua
950 mA
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Tensión de corte de fuente de puerta
-
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGHV1F00, CGHV1F, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V 12DFN
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descripción Valores Precio
CGHV1F006S-AMP1
DISTI # CGHV1F006S-AMP1-ND
WolfspeedDEMO HEMT TRANS AMP1 CGHV1F006S
RoHS: Compliant
Min Qty: 1
Container: Bulk
1In Stock
  • 1:$596.6200
CGHV1F006S
DISTI # CGHV1F006STR-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
On Order
  • 250:$39.8800
CGHV1F006S
DISTI # CGHV1F006SCT-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$43.8682
  • 1:$44.6700
CGHV1F006S
DISTI # CGHV1F006SDKR-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$43.8682
  • 1:$44.6700
CGHV1F006S-AMP3
DISTI # CGHV1F006S-AMP3-ND
WolfspeedDEMO HEMT TRANS AMP3 CGHV1F006S
RoHS: Compliant
Min Qty: 1
Container: Bulk
Temporarily Out of Stock
  • 1:$596.6200
CGHV1F006S
DISTI # 941-CGHV1F006S
Cree, Inc.RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
RoHS: Compliant
0
  • 1:$39.8800
CGHV1F006S-AMP1
DISTI # 941-CGHV1F006S-AMP1
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
2
  • 1:$596.6200
CGHV1F006S-AMP3
DISTI # 941-CGHV1F006S-AMP3
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
0
  • 1:$596.6200
CGHV1F006S-AMP1
DISTI # CGHV1F006S-AMP1
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
0
  • 1:$596.6200
CGHV1F006S-AMP3
DISTI # CGHV1F006S-AMP3
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
0
  • 1:$596.6200
Imagen Parte # Descripción
CGHV1F025S

Mfr.#: CGHV1F025S

OMO.#: OMO-CGHV1F025S

RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
CGHV1F006S-AMP3

Mfr.#: CGHV1F006S-AMP3

OMO.#: OMO-CGHV1F006S-AMP3

RF Development Tools Test Board with GaN HEMT
CGHV14250F-TB

Mfr.#: CGHV14250F-TB

OMO.#: OMO-CGHV14250F-TB-WOLFSPEED

TEST FIXTURE FOR CGHV14250
CGHV14500F/P

Mfr.#: CGHV14500F/P

OMO.#: OMO-CGHV14500F-P-1190

Nuevo y original
CGHV1F006S-AMP1

Mfr.#: CGHV1F006S-AMP1

OMO.#: OMO-CGHV1F006S-AMP1-WOLFSPEED

DEMO HEMT TRANS AMP1 CGHV1F006S
CGHV14250P

Mfr.#: CGHV14250P

OMO.#: OMO-CGHV14250P-1152

RF POWER TRANSISTOR
CGHV1F006S-AMP3

Mfr.#: CGHV1F006S-AMP3

OMO.#: OMO-CGHV1F006S-AMP3-WOLFSPEED

DEMO HEMT TRANS AMP3 CGHV1F006S
CGHV1J025D-GP4

Mfr.#: CGHV1J025D-GP4

OMO.#: OMO-CGHV1J025D-GP4-WOLFSPEED

RF POWER TRANSISTOR
CGHV1J070D

Mfr.#: CGHV1J070D

OMO.#: OMO-CGHV1J070D-318

RF JFET Transistors DC-18GHz 70 Watts Gain 17dB @10GHz
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de CGHV1F006S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
59,82 US$
59,82 US$
10
56,83 US$
568,29 US$
100
53,84 US$
5 383,80 US$
500
50,85 US$
25 423,50 US$
1000
47,86 US$
47 856,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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