OMO ElectronicOMO Electronic
Expand menu
0 Carro

IXTH80N65X2

IXTH80N65X2
Mfr. #:
IXTH80N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH80N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH80N65X2 DatasheetIXTH80N65X2 Datasheet (P4-P5)
ECAD Model:
Más información:
IXTH80N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
38 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
137 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
890 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Serie:
X2-Class
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
72 ns
Tiempo típico de retardo de encendido:
36 ns
Tags
IXTH80, IXTH8, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Parte # Mfg. Descripción Valores Precio
IXTH80N65X2
DISTI # 31008293		IXYS CorporationTrans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247120
  • 510:$6.6290
  • 120:$7.9121
  • 30:$8.7674
  • 2:$10.6920
IXTH80N65X2
DISTI # IXTH80N65X2-ND		IXYS CorporationMOSFET N-CH 650V 80A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		306In Stock
  • 510:$6.6960
  • 120:$7.9920
  • 30:$8.8560
  • 10:$9.7200
  • 1:$10.8000
IXTH80N65X2
DISTI # 02AC9836		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes55
  • 250:$8.0700
  • 100:$8.5100
  • 50:$8.9400
  • 25:$9.6000
  • 10:$10.2500
  • 1:$10.9100
IXTH80N65X2
DISTI # 9171435P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU21
  • 10:£7.4500
IXTH80N65X2
DISTI # 2674783		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		47
  • 510:$10.2300
  • 120:$12.2000
  • 30:$13.5200
  • 1:$16.4900
IXTH80N65X2
DISTI # 2674783		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		45
  • 100:£5.6900
  • 50:£5.9900
  • 10:£6.3000
  • 5:£7.6900
  • 1:£8.2200
Imagen Parte # Descripción
IXTH86N25T

Mfr.#: IXTH86N25T

OMO.#: OMO-IXTH86N25T

 Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-247AD
IXTH8P50

Mfr.#: IXTH8P50

OMO.#: OMO-IXTH8P50

 MOSFET -8 Amps -500V 1.2 Rds
IXTH80N20L

Mfr.#: IXTH80N20L

OMO.#: OMO-IXTH80N20L

 MOSFET Standard Linear Power MOSFETs
IXTH80N65X2

Mfr.#: IXTH80N65X2

OMO.#: OMO-IXTH80N65X2

 MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
IXTH86N20T

Mfr.#: IXTH86N20T

OMO.#: OMO-IXTH86N20T

 MOSFET 86 Amps 200V 29 Rds
IXTH88N15

Mfr.#: IXTH88N15

OMO.#: OMO-IXTH88N15

 MOSFET 88 Amps 150V 0.022 Rds
IXTH86N25T

Mfr.#: IXTH86N25T

OMO.#: OMO-IXTH86N25T-1190

 Nuevo y original
IXTH80N65X2

Mfr.#: IXTH80N65X2

OMO.#: OMO-IXTH80N65X2-IXYS-CORPORATION

 MOSFET N-CH 650V 80A TO-247
IXTH88N30P

Mfr.#: IXTH88N30P

OMO.#: OMO-IXTH88N30P-IXYS-CORPORATION

 Darlington Transistors MOSFET 88 Amps 100 V 0.04 Ohms Rds
IXTH88N15

Mfr.#: IXTH88N15

OMO.#: OMO-IXTH88N15-IXYS-CORPORATION

 MOSFET 88 Amps 150V 0.022 Rds
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IXTH80N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,41 US$
12,41 US$
10
11,18 US$
111,80 US$
25
9,30 US$
232,50 US$
50
8,64 US$
432,00 US$
100
8,45 US$
845,00 US$
250
7,71 US$
1 927,50 US$
500
7,03 US$
3 515,00 US$
1000
6,71 US$
6 710,00 US$
Empezar con
Nuevos productos
More Newest Products
Top