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IXTH8P50

IXTH8P50
Mfr. #:
IXTH8P50
Fabricante:
Littelfuse
Descripción:
MOSFET -8 Amps -500V 1.2 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH8P50 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
1.2 Ohms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
130 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
180 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
21.46 mm
Longitud:
16.26 mm
Serie:
IXTH8P50
Tipo de transistor:
1 P-Channel
Escribe:
MOSFET de potencia estándar
Ancho:
5.3 mm
Marca:
IXYS
Transconductancia directa - Mín .:
4 S
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
33 ns
Unidad de peso:
0.229281 oz
Tags
IXTH8, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 500 V 1.2 Ohm 180 W Power Mosfet - TO-247 AD
***ical
Trans MOSFET P-CH Si 500V 7A 3-Pin(3+Tab) TO-247AD
*** Electronics
MOSFET P-CH 500V 8A TO-247
***S
new, original packaged
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-247-3
***ark
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 18A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 600 V 0.28 O 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3
***el Electronic
0.5% Accuracy Low-Voltage Adjustable Precision Shunt Regulator 3-TO-92 -40 to 125
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***icroelectronics
N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
***ical
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 170W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics SCT
Power MOSFETs, 600V, 20A, TO-247, Tube
***el Electronic
CAP CER 0.068UF 50V C0G RADIAL
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Parte # Mfg. Descripción Valores Precio
IXTH8P50
DISTI # IXTH8P50-ND		IXYS CorporationMOSFET P-CH 500V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		128In Stock
  • 1020:$3.8165
  • 510:$4.3818
  • 120:$5.2299
  • 30:$5.7953
  • 1:$7.0700
IXTH8P50
DISTI # 747-IXTH8P50		IXYS CorporationMOSFET -8 Amps -500V 1.2 Rds
RoHS: Compliant		853
  • 1:$8.2600
  • 10:$7.3900
  • 25:$6.4300
  • 50:$6.3000
  • 100:$6.0600
  • 250:$5.1700
  • 500:$4.9100
  • 1000:$4.1400
IXTH8P50IXYS Corporation 56
  • 43:$5.5500
  • 12:$6.0000
  • 1:$9.0000
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 Rectifiers 6 Amps 600V
Disponibilidad
Valores:
721
En orden:
2704
Ingrese la cantidad:
El precio actual de IXTH8P50 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,43 US$
6,43 US$
10
5,84 US$
58,40 US$
25
5,26 US$
131,50 US$
50
5,00 US$
250,00 US$
100
4,75 US$
475,00 US$
250
4,36 US$
1 090,00 US$
500
3,98 US$
1 990,00 US$
1000
3,59 US$
3 590,00 US$
2500
3,55 US$
8 875,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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