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IXFR64N60P

IXFR64N60P
Mfr. #:
IXFR64N60P
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET DIODE Id36 BVdass600
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFR64N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFR64N60P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFR64N60
embalaje
Tubo
Unidad de peso
0.186952 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
360 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
24 ns
Hora de levantarse
23 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
105 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
79 ns
Tiempo de retardo de encendido típico
28 ns
Transconductancia directa-Mín.
63 S
Modo de canal
Mejora
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFR64N60P
DISTI # V36:1790_15878443		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 1000:$8.1290
  • 500:$8.8510
  • 250:$9.6860
  • 100:$10.5040
  • 50:$10.8300
  • 25:$11.7040
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # IXFR64N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$12.7797
IXFR64N60P
DISTI # 30696577		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # 747-IXFR64N60P		IXYS CorporationMOSFET DIODE Id36 BVdass600
RoHS: Compliant		145
  • 1:$15.8900
  • 10:$14.4400
  • 25:$13.3600
  • 50:$12.2900
  • 100:$11.9900
  • 250:$10.9900
  • 500:$9.9700
IXFR64N60P
DISTI # C1S331700009007		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 50:$10.8300
Imagen Parte # Descripción
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P

 MOSFET DIODE Id36 BVdass600
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P

 MOSFET 500V 64A
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

 MOSFET N-CH 600V 42A ISOPLUS247
IXFR66N50Q2

Mfr.#: IXFR66N50Q2

OMO.#: OMO-IXFR66N50Q2-IXYS-CORPORATION

 MOSFET N-CH 500V 50A ISOPLUS247
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET DIODE Id36 BVdass600
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P-IXYS-CORPORATION

 MOSFET 500V 64A
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IXFR64N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,19 US$
12,19 US$
10
11,58 US$
115,84 US$
100
10,97 US$
1 097,42 US$
500
10,36 US$
5 182,25 US$
1000
9,75 US$
9 754,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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