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IXFR64N60P

IXFR64N60P
Mfr. #:
IXFR64N60P
Fabricante:
Littelfuse
Descripción:
MOSFET DIODE Id36 BVdass600
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFR64N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR64N60P DatasheetIXFR64N60P Datasheet (P4-P5)
ECAD Model:
Más información:
IXFR64N60P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
105 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
360 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
21.34 mm
Longitud:
16.13 mm
Serie:
IXFR64N60
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
IXYS
Transconductancia directa - Mín .:
63 S
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
79 ns
Tiempo típico de retardo de encendido:
28 ns
Unidad de peso:
0.186952 oz
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFR64N60P
DISTI # V36:1790_15878443		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 1000:$8.1290
  • 500:$8.8510
  • 250:$9.6860
  • 100:$10.5040
  • 50:$10.8300
  • 25:$11.7040
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # IXFR64N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$12.7797
IXFR64N60P
DISTI # 30696577		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # 747-IXFR64N60P		IXYS CorporationMOSFET DIODE Id36 BVdass600
RoHS: Compliant		145
  • 1:$15.8900
  • 10:$14.4400
  • 25:$13.3600
  • 50:$12.2900
  • 100:$11.9900
  • 250:$10.9900
  • 500:$9.9700
IXFR64N60P
DISTI # C1S331700009007		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 50:$10.8300
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STTH6002CPI

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Disponibilidad
Valores:
133
En orden:
2116
Ingrese la cantidad:
El precio actual de IXFR64N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
15,89 US$
15,89 US$
10
14,44 US$
144,40 US$
25
13,36 US$
334,00 US$
50
12,29 US$
614,50 US$
100
11,99 US$
1 199,00 US$
250
10,99 US$
2 747,50 US$
500
9,97 US$
4 985,00 US$
1000
9,11 US$
9 110,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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