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| PartNumber | IXFR64N60P | IXFR64N50P | IXFR64N50Q3 |
| Description | MOSFET DIODE Id36 BVdass600 | MOSFET 500V 64A | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
| Id Continuous Drain Current | 36 A | 35 A | 45 A |
| Rds On Drain Source Resistance | 105 mOhms | 95 mOhms | 94 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 360 W | 300 W | 500 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.34 mm | 21.34 mm | - |
| Length | 16.13 mm | 16.13 mm | - |
| Series | IXFR64N60 | IXFR64N50 | IXFR64N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.21 mm | 5.21 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 63 S | 50 S | - |
| Fall Time | 24 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 25 ns | 250 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 85 ns | - |
| Typical Turn On Delay Time | 28 ns | 30 ns | - |
| Unit Weight | 0.186952 oz | 0.186952 oz | 0.056438 oz |
| Qg Gate Charge | - | - | 145 nC |