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IXFN360N10T

IXFN360N10T
Mfr. #:
IXFN360N10T
Fabricante:
Littelfuse
Descripción:
MOSFET N-CH 100V 360A SOT-227B
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN360N10T Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFN360N10T más información
Atributo del producto
Valor de atributo
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T
***ure Electronics
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
***p One Stop Japan
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
*** Source Electronics
GigaMOS Trench HiperFET Power MOSFET
***i-Key
MOSFET N-CH 100V 360A SOT-227B
***ukat
N-Ch 100V 360A 830W 0,0026R SOT227B
***ark
Mosfet Module, N-Ch, 100V, 360A; Transistor Polarity:n Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)
***nell
MODULO MOSFET, CA-N, 100V, 360A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:360A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0026ohm; Tensione Vgs di Misura Rds(on):100V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:830W; Temperatura di Esercizio Max:175°C; Gamma Prodotti:Trench HiperFET Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFN360N10T
DISTI # V36:1790_15877367		IXYS CorporationTrans MOSFET N-CH 100V 360A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN360N10T
    DISTI # IXFN360N10T-ND    		IXYS CorporationMOSFET N-CH 100V 360A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		608In Stock
    • 500:$13.8330
    • 100:$16.2180
    • 30:$17.6490
    • 10:$19.0800
    • 1:$20.9900
    IXFN360N10T
    DISTI # 747-IXFN360N10T    		IXYS CorporationMOSFET 360 Amps 100V
    RoHS: Compliant    		591
    • 1:$20.9900
    • 10:$19.0800
    • 20:$17.6400
    • 50:$16.9200
    • 100:$16.2100
    • 200:$14.7800
    • 500:$13.8300
    IXFN360N10T
    DISTI # 1258041    		IXYS CorporationMOSFET 360A 100V SOT227, EA79
    • 20:£13.5700
    • 10:£13.8500
    • 5:£14.3500
    • 2:£15.0200
    • 1:£16.6800
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationModule,single transistor,100V,360A,SOT227B,Ugs: ±30V,screw58
    • 10:$15.6500
    • 3:$17.7900
    • 1:$19.7100
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationN-Ch 100V 360A 830W 0,0026R SOT227B
    RoHS: Compliant    		46
    • 1:€16.5000
    • 5:€13.5000
    • 10:€12.5000
    • 25:€12.0500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		11
    • 100:£11.7300
    • 50:£13.4300
    • 10:£14.0000
    • 5:£15.3300
    • 1:£16.6500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		0
    • 100:$21.3700
    • 50:$22.0400
    • 10:$22.8200
    • 5:$24.1200
    • 1:$24.5800
    Imagen Parte # Descripción
    IXFN360N15T2

    Mfr.#: IXFN360N15T2

    OMO.#: OMO-IXFN360N15T2

    		 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
    IXFN32N100Q3

    Mfr.#: IXFN32N100Q3

    OMO.#: OMO-IXFN32N100Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
    IXFN340N06

    Mfr.#: IXFN340N06

    OMO.#: OMO-IXFN340N06

    		 MOSFET 340 Amps 60V 0.003 Rds
    IXFN32N60

    Mfr.#: IXFN32N60

    OMO.#: OMO-IXFN32N60

    		 MOSFET 32 Amps 600V
    IXFN30N110P

    Mfr.#: IXFN30N110P

    OMO.#: OMO-IXFN30N110P-IXYS-CORPORATION

    		 MOSFET N-CH 1100V 25A SOT-227B
    IXFN39N90

    Mfr.#: IXFN39N90

    OMO.#: OMO-IXFN39N90-IXYS-CORPORATION

    		 MOSFET 39 Amps 900V 0.2 Rds
    IXFN38N100Q2

    Mfr.#: IXFN38N100Q2

    OMO.#: OMO-IXFN38N100Q2-IXYS-CORPORATION

    		 MOSFET 38 Amps 1000V 0.25 Rds
    IXFN340N06

    Mfr.#: IXFN340N06

    OMO.#: OMO-IXFN340N06-IXYS-CORPORATION

    		 MOSFET 340 Amps 60V 0.003 Rds
    IXFN32N60

    Mfr.#: IXFN32N60

    OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

    		 MOSFET 32 Amps 600V
    IXFN34N80

    Mfr.#: IXFN34N80

    OMO.#: OMO-IXFN34N80-IXYS-CORPORATION

    		 MOSFET 34 Amps 800V 0.24 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IXFN360N10T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
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    Ext. Precio
    1
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    0,00 US$
    10
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    100
    0,00 US$
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    500
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    1000
    0,00 US$
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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