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IRFB4229PBF

IRFB4229PBF
Mfr. #:
IRFB4229PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 250V 46A 46mOhm 72nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB4229PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB4229PBF DatasheetIRFB4229PBF Datasheet (P4-P6)IRFB4229PBF Datasheet (P7-P8)
ECAD Model:
Más información:
IRFB4229PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
250 V
Id - Corriente de drenaje continua:
46 A
Rds On - Resistencia de la fuente de drenaje:
46 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
72 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
330 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
83 S
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
31 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
18 ns
Parte # Alias:
SP001565910
Unidad de peso:
0.211644 oz
Tags
IRFB422, IRFB42, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFB4229PBF N-channel MOSFET Transistor, 46 A, 250 V, 3-Pin TO-220AB
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS
*** Source Electronics
Trans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 250V 46A TO-220AB
***ure Electronics
Single N-Channel 250 V 46 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
***ment14 APAC
MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:250V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:46A; N-channel Gate Charge:72nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFB4229PBF
DISTI # 30719869		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		7651
  • 5000:$1.5648
  • 2000:$1.6224
  • 1000:$1.7088
  • 500:$2.0256
  • 250:$2.2560
  • 100:$2.3808
  • 10:$2.7456
IRFB4229PBF
DISTI # 30332350		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		470
  • 5:$2.7860
IRFB4229PBF
DISTI # 31234204		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 100:$2.3077
  • 50:$2.6138
  • 10:$3.0983
  • 6:$4.2840
IRFB4229PBF
DISTI # IRFB4229PBF-ND		Infineon Technologies AGMOSFET N-CH 250V 46A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		851In Stock
  • 1000:$2.2836
  • 500:$2.6611
  • 100:$3.2274
  • 10:$3.8810
  • 1:$4.3200
IRFB4229PBF
DISTI # C1S322000488720		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 100:$1.8100
  • 50:$2.0500
  • 10:$2.4300
  • 1:$3.3900
IRFB4229PBF
DISTI # V99:2348_13889730		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		470
  • 5000:$1.6460
  • 2000:$1.6820
  • 1000:$1.7270
  • 500:$1.8580
  • 250:$1.9690
  • 100:$2.1269
  • 10:$2.4390
  • 1:$2.7860
IRFB4229PBF
DISTI # SP001565910		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB (Alt: SP001565910)
RoHS: Compliant
Min Qty: 1		Europe - 1350
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.2900
IRFB4229PBF
DISTI # IRFB4229PBF		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4229PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.4900
  • 2000:$1.3900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
IRFB4229PBF
DISTI # IRFB4229PBF		Infineon Technologies AGTrans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4229PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4229PBF
    DISTI # 18M1487    		Infineon Technologies AGN CHANNEL MOSFET, HEXFET, 250V, 46A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:46A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes35
    • 1:$3.9400
    • 10:$3.4000
    • 25:$3.2600
    • 50:$3.1300
    • 100:$2.9900
    • 250:$2.8600
    • 500:$2.6000
    IRFB4229PBF
    DISTI # 70017934    		Infineon Technologies AGMOSFET,N Ch.,250V,46A,46 MOHM,72 NC QG,TO-220AB,Pb-Free
    RoHS: Compliant    		0
    • 300:$3.7900
    IRFB4229PBFInfineon Technologies AGSingle N-Channel 250 V 46 mOhm 72 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		1410Tube
    • 5:$2.0300
    • 50:$1.8500
    • 300:$1.5600
    IRFB4229PBF
    DISTI # 942-IRFB4229PBF    		Infineon Technologies AGMOSFET MOSFT 250V 46A 46mOhm 72nC Qg
    RoHS: Compliant    		5814
    • 1:$3.5000
    • 10:$2.9700
    • 100:$2.5800
    • 250:$2.4500
    • 500:$2.2000
    • 1000:$1.8500
    • 2000:$1.7600
    IRFB4229PBF
    DISTI # 6886942    		Infineon Technologies AGMOSFET N-CHANNEL 250V 46A HEXFET TO220AB, EA851
    • 1:£2.7300
    • 5:£2.0200
    • 10:£1.8600
    • 20:£1.7000
    • 50:£1.6300
    IRFB4229PBF
    DISTI # IRFB4229PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,46A,330W,TO220AB44
    • 1:$3.2400
    • 3:$2.9100
    • 10:$2.4000
    • 100:$2.1500
    IRFB4229PBF
    DISTI # IRFB4229PBF    		Infineon Technologies AGN-Ch 250V 46A 330W 0,046R TO220AB
    RoHS: Compliant    		170
    • 10:€2.1700
    • 50:€1.8700
    • 200:€1.7700
    • 500:€1.7100
    IRFB4229PBF
    DISTI # 1436957    		Infineon Technologies AGMOSFET, N, 250V, TO-220AB
    RoHS: Compliant    		35
    • 1:$5.5400
    • 10:$4.7100
    • 100:$4.0900
    • 250:$3.8800
    • 500:$3.4900
    • 1000:$2.9300
    • 2000:$2.8500
    IRFB4229PBF
    DISTI # XSLY00000006706    		Infineon Technologies AGTO-220AB
    RoHS: Compliant    		2160
    • 350:$1.9300
    • 2160:$1.8000
    IRFB4229PBF
    DISTI # XSKDRABV0021427    		Infineon Technologies AG 
    RoHS: Compliant    		648
    • 300:$3.2500
    • 648:$2.9800
    IRFB4229PBF
    DISTI # XSKDRABS0006789    		Infineon Technologies AG 
    RoHS: Compliant    		1000
    • 1000:$2.7600
    IRFB4229PBF
    DISTI # 1436957    		Infineon Technologies AGMOSFET, N, 250V, TO-220AB
    RoHS: Compliant    		0
    • 1:£2.0600
    • 10:£1.6600
    • 100:£1.5900
    • 250:£1.5200
    • 500:£1.4400
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    Mfr.#: TDA8954TH/N1,112

    OMO.#: OMO-TDA8954TH-N1-112

    		 Audio Amplifiers TDA8954TH/HSOP24//N1/TUBE NDP DSC BULK PACK
    IRS21531DSPbF

    Mfr.#: IRS21531DSPbF

    OMO.#: OMO-IRS21531DSPBF

    		 Gate Drivers SELF-OSCILLATING HALF BRDG DRVR 600V
    IR21531STRPBF

    Mfr.#: IR21531STRPBF

    OMO.#: OMO-IR21531STRPBF

    		 Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 0.6
    IRS21531DSTRPBF

    Mfr.#: IRS21531DSTRPBF

    OMO.#: OMO-IRS21531DSTRPBF

    		 Gate Drivers Self-Osc Half Bridge Drvr 1.1us
    STP20NK50Z

    Mfr.#: STP20NK50Z

    OMO.#: OMO-STP20NK50Z

    		 MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH
    IRFB4227PBF

    Mfr.#: IRFB4227PBF

    OMO.#: OMO-IRFB4227PBF

    		 MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
    IRFB4019PBF

    Mfr.#: IRFB4019PBF

    OMO.#: OMO-IRFB4019PBF

    		 MOSFET MOSFT 150V 17A 95mOhm 13nC Qg
    STP11NK50Z

    Mfr.#: STP11NK50Z

    OMO.#: OMO-STP11NK50Z

    		 MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH
    MC33078DR

    Mfr.#: MC33078DR

    OMO.#: OMO-MC33078DR-TEXAS-INSTRUMENTS

    		 High Speed Operational Amplifiers Dual Hi-Sp Lo-Noise Op Amp
    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de IRFB4229PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,49 US$
    3,49 US$
    10
    2,97 US$
    29,70 US$
    100
    2,57 US$
    257,00 US$
    250
    2,44 US$
    610,00 US$
    500
    2,19 US$
    1 095,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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