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IRFB4227PBF

IRFB4227PBF
Mfr. #:
IRFB4227PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB4227PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB4227PBF DatasheetIRFB4227PBF Datasheet (P4-P6)IRFB4227PBF Datasheet (P7-P8)
ECAD Model:
Más información:
IRFB4227PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
65 A
Rds On - Resistencia de la fuente de drenaje:
24 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
70 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
330 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
49 S
Otoño:
31 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
33 ns
Parte # Alias:
SP001565892
Unidad de peso:
0.211644 oz
Tags
IRFB4227P, IRFB4227, IRFB422, IRFB42, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB
***ure Electronics
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3
***ment14 APAC
MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFB4227PBF
DISTI # V36:1790_16260937		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1340
  • 5000:$1.1081
  • 2000:$1.1865
  • 1000:$1.1879
  • 500:$1.5861
  • 250:$1.8140
  • 100:$1.9786
  • 10:$2.2415
  • 1:$2.5817
IRFB4227PBF
DISTI # V99:2348_16260937		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 5000:$1.1081
  • 2000:$1.1865
  • 1000:$1.1879
  • 500:$1.5861
  • 250:$1.8140
  • 100:$1.9786
  • 10:$2.2415
  • 1:$2.5817
IRFB4227PBF
DISTI # IRFB4227PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 65A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3573In Stock
  • 1000:$1.8641
  • 500:$2.1722
  • 100:$2.6345
  • 10:$3.1680
  • 1:$3.5200
IRFB4227PBF
DISTI # 31003125		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1340
  • 1000:$1.1879
  • 500:$1.5861
  • 250:$1.8140
  • 100:$1.9786
  • 10:$2.2415
  • 6:$2.5817
IRFB4227PBF
DISTI # 31011342		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 1000:$1.1879
  • 500:$1.5861
  • 250:$1.8140
  • 100:$1.9786
  • 10:$2.2415
  • 6:$2.5817
IRFB4227PBF
DISTI # 30605433		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		200
  • 8:$3.1375
IRFB4227PBF
DISTI # IRFB4227PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4227PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 2930
  • 1:$2.4900
  • 10:$2.0900
  • 25:$2.0900
  • 50:$2.0900
  • 100:$1.7900
  • 500:$1.4900
  • 1000:$1.0900
IRFB4227PBF
DISTI # SP001565892		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB (Alt: SP001565892)
RoHS: Compliant
Min Qty: 1		Europe - 550
  • 1:€2.3900
  • 10:€1.9900
  • 25:€1.9900
  • 50:€1.9900
  • 100:€1.6900
  • 500:€1.4900
  • 1000:€1.0900
IRFB4227PBF
DISTI # IRFB4227PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4227PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4227PBF
    DISTI # 66K6432    		Infineon Technologies AGMOSFET, 200V, 65A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0197ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,No. of Pins:3Pins RoHS Compliant: Yes595
    • 1:$2.5800
    • 10:$2.1900
    • 100:$1.9000
    • 500:$1.6200
    • 1000:$1.3600
    • 2500:$1.3000
    • 5000:$1.2500
    IRFB4227PBF
    DISTI # 70017362    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 19.7 Milliohms,ID 65A,TO-220AB,PD 330W
    RoHS: Compliant    		0
    • 1:$3.3780
    • 10:$2.9810
    • 100:$2.5990
    • 500:$2.2520
    • 1000:$1.9870
    IRFB4227PBF
    DISTI # 942-IRFB4227PBF    		Infineon Technologies AGMOSFET MOSFT 200V 65A 26mOhm 70nC Qg
    RoHS: Compliant    		8501
    • 1:$2.8600
    • 10:$2.4300
    • 100:$2.1100
    • 250:$2.0000
    • 500:$1.7900
    • 1000:$1.5100
    • 2000:$1.4400
    • 5000:$1.3800
    IRFB4227PBFInfineon Technologies AGSingle N-Channel 200 V 24 mOhm 98 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		7827Tube
    • 10:$1.6500
    • 100:$1.4600
    • 500:$1.2500
    IRFB4227PBFInternational Rectifier 86
      IRFB4227PBF
      DISTI # 6504277      		Infineon Technologies AGMOSFET N-CHANNEL 200V 65A TO220AB, EA644
      • 1:£3.5600
      • 10:£2.0300
      • 25:£1.8700
      IRFB4227PBF
      DISTI # 6504277P      		Infineon Technologies AGMOSFET N-CHANNEL 200V 65A TO220AB, TU1428
      • 10:£2.0300
      • 25:£1.8700
      IRFB4227PBFInternational Rectifier65 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB137
      • 107:$2.1830
      • 30:$2.3600
      • 1:$3.5400
      IRFB4227PBF
      DISTI # IRFB4227PBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,65A,190W,TO220AB284
      • 1:$2.1700
      • 3:$1.9800
      • 10:$1.6100
      • 100:$1.4000
      IRFB4227PBF
      DISTI # IRFB4227PBF      		Infineon Technologies AGN-Ch 200V 65A 330W 0,024R TO220AB
      RoHS: Compliant      		530
      • 10:€1.5000
      • 50:€1.2000
      • 200:€1.1000
      • 500:€1.0600
      IRFB4227PBFInternational RectifierINSTOCK2725
        IRFB4227PBF INSTOCK500
          IRFB4227PBF
          DISTI # 1298536          		Infineon Technologies AGMOSFET, N, 200V, TO-220
          RoHS: Compliant          		3280
          • 1:£2.5100
          • 10:£1.7200
          • 100:£1.6400
          • 250:£1.3400
          • 500:£1.1800
          IRFB4227PBF
          DISTI # XSKDRABV0021426          		INF 
          RoHS: Compliant          		50
          • 400:$2.3100
          IRFB4227PBF
          DISTI # XSLY00000000918          		INFINEON/IRTO-220AB
          RoHS: Compliant          		12240
          • 600:$1.1700
          • 12240:$1.0900
          IRFB4227PBF
          DISTI # XSFP00000152679          		Infineon Technologies AGPowerField-EffectTransistor,65AI(D),200V,0.024ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
          RoHS: Compliant          		9508
          • 100:$3.3000
          • 9508:$3.0000
          IRFB4227PBF
          DISTI # C1S327400128344          		Infineon Technologies AGTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube
          RoHS: Compliant          		293
          • 100:$1.8100
          • 50:$2.0500
          • 10:$2.4300
          • 1:$2.8500
          IRFB4227PBF
          DISTI # C1S322000488696          		Infineon Technologies AGMOSFETs
          RoHS: Compliant          		1340
          • 500:$1.5861
          • 250:$1.8140
          • 100:$1.9786
          • 10:$2.2415
          • 1:$2.5817
          IRFB4227PBF
          DISTI # C1S322000599992          		Infineon Technologies AGMOSFETs
          RoHS: Compliant          		200
          • 100:$1.6200
          • 50:$1.8400
          • 10:$2.1800
          • 1:$2.5100
          IRFB4227PBF
          DISTI # 1298536          		Infineon Technologies AGMOSFET, N, 200V, TO-220
          RoHS: Compliant          		3422
          • 1:$4.5300
          • 10:$3.8500
          • 100:$3.3400
          • 250:$3.1700
          • 500:$2.8400
          • 1000:$2.4000
          • 2000:$2.2800
          • 5000:$2.1900
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          Disponibilidad
          Valores:
          Available
          En orden:
          1989
          Ingrese la cantidad:
          El precio actual de IRFB4227PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          2,85 US$
          2,85 US$
          10
          2,42 US$
          24,20 US$
          100
          2,10 US$
          210,00 US$
          250
          1,99 US$
          497,50 US$
          500
          1,78 US$
          890,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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