CSD85312Q3E

Mfr. #:: CSD85312Q3E
Descripción:: MOSFET 2N-CH 20V 39A 8VSON
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CSD85312Q3E Ficha de datos
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Más información:: CSD85312Q3E más información CSD85312Q3E Product Details

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Valor de atributo

Fabricante: Instrumentos Texas

categoria de producto: FET: matrices

Serie: NexFET

embalaje: Embalaje alternativo de Digi-ReelR

Estilo de montaje: SMD / SMT

Nombre comercial: NexFET

Paquete-Estuche: 8-PowerVDFN

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: 8-VSON (3.3x3.3)

Configuración: Fuente común dual

Tipo FET: 2 N-Channel (Dual) Common Source

Potencia máxima: 2.5W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 2390pF @ 10V

Función FET: Logic Level Gate, 5V Drive

Corriente-Continuo-Drenaje-Id-25 ° C: 39A

Rds-On-Max-Id-Vgs: 12.4 mOhm @ 10A, 8V

Vgs-th-Max-Id: 1.4V @ 250μA

Puerta-Carga-Qg-Vgs: 15.2nC @ 4.5V

Disipación de potencia Pd: 2.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 6 ns

Hora de levantarse: 27 ns

Vgs-Puerta-Fuente-Voltaje: 10 V

Id-corriente-de-drenaje-continua: 76 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.1 V

Resistencia a la fuente de desagüe de Rds: 14 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 24 ns

Tiempo de retardo de encendido típico: 11 ns

Qg-Gate-Charge: 11.7 nC

Transconductancia directa-Mín.: 99 S

Tags: CSD85, CSD8, CSD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD85312Q3E Descripción

***as Instruments: 20V, N ch NexFET MOSFET™, dual common source SON3x3, 14mOhm 8-VSON -55 to 150

***ark: TRANSISTOR, MOSFET, N CHANNEL, 20V, 39A, SON8

***p One Stop Global: Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R

***et Europe: Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R

***i-Key: MOSFET 2N-CH 20V 39A 8VSON

CSD85312Q3E Más información

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descripción	Valores	Precio
CSD85312Q3E DISTI # 296-37187-1-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-6-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-2-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.3844 5000:$0.3994 2500:$0.4204
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R - Tape and Reel (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3559 5000:$0.3549 10000:$0.3539 15000:$0.3529 25000:$0.3529
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.5489 10:€0.4939 25:€0.4489 50:€0.4119 100:€0.3799 500:€0.3529 1000:€0.3289
CSD85312Q3E	Dual 20-V N-Channel NexFET&#153,Power MOSFETs, CSD85312Q3E	4740	1000:$0.3100 750:$0.3500 500:$0.4300 250:$0.5300 100:$0.5800 25:$0.6700 10:$0.7300 1:$0.8200
CSD85312Q3E	Power Field-Effect Transistor, 12A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	83400	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400
CSD85312Q3E DISTI # 595-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs RoHS: Compliant	3104	1:$0.9000 10:$0.7700 100:$0.5870 500:$0.5190 1000:$0.4100 2500:$0.3640

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2	MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T	MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT-TEXAS-INSTRUMENTS	MOSFET 2N-CH
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 4-Pin PICOSTAR T/R
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 20V 39A 8VSON

Disponibilidad

Valores:: Available
En orden:: 2500
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El precio actual de CSD85312Q3E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,46 US$~~; ~~0,46 US$~~

10: ~~0,44 US$~~; ~~4,42 US$~~

100: ~~0,42 US$~~; ~~41,85 US$~~

500: ~~0,40 US$~~; ~~197,65 US$~~

1000: ~~0,37 US$~~; ~~372,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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CSD85312Q3E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes