SIHF30N60E-E3

SIHF30N60E-E3
Mfr. #:
SIHF30N60E-E3
Fabricante:
Vishay / Siliconix
Descripción:
IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF30N60E-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIHF30N60E-E3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
Chips de IC
Serie
E
embalaje
Tubo
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Nombre comercial
Serie E
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
37 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
29 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
125 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
85 nC
Transconductancia directa-Mín.
5.4 S
Tags
SIHF3, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 29A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHF30N60E-E3
DISTI # V36:1790_14140830
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
0
  • 1000000:$3.0000
  • 500000:$3.0050
  • 100000:$3.9020
  • 10000:$5.8200
  • 1000:$6.1600
SIHF30N60E-E3
DISTI # SIHF30N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF30N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.7900
  • 10000:$2.7900
  • 4000:$2.8900
  • 2000:$3.0900
  • 1000:$3.1900
SIHF30N60E-GE3
DISTI # 78-SIHF30N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
0
  • 1:$5.8300
  • 10:$4.9400
  • 100:$4.2300
  • 250:$4.1700
  • 500:$4.1600
  • 1000:$3.0800
  • 2500:$2.9200
SIHF30N60E-E3
DISTI # 781-SIHF30N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
0
  • 1:$6.1600
  • 10:$5.0900
  • 100:$4.2000
  • 250:$4.1900
  • 500:$4.1800
SIHF30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
Americas -
    SIHF30N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant
    Americas -
      SIHF30N60E-E3
      DISTI # 7689322
      Vishay IntertechnologiesSIHF30N60E-E3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA
      Min Qty: 1
      Container: Bulk
      131
      • 1:$7.7900
      • 5:$7.1980
      SIHF30N60EE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      Europe - 1000
        Imagen Parte # Descripción
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3-126

        IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3-VISHAY

        RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de SIHF30N60E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,18 US$
        4,18 US$
        10
        3,98 US$
        39,76 US$
        100
        3,77 US$
        376,65 US$
        500
        3,56 US$
        1 778,65 US$
        1000
        3,35 US$
        3 348,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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