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SIHF30N60E-GE3

SIHF30N60E-GE3
Mfr. #:
SIHF30N60E-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF30N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHF30N60E-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHF3, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SiHF30N60E-GE3
***ure Electronics
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***p One Stop Global
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP
***ark
MOSFET, N-CH, 600V, 21A, TO-220FP
***i-Key
MOSFET N-CH 600V 29A TO220
***
600V N-CHANNEL
***nell
MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:37W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHF30N60E-GE3
DISTI # SIHF30N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		1820In Stock
  • 1000:$3.3880
  • 500:$4.0172
  • 100:$4.9610
  • 10:$6.0500
  • 1:$6.7800
SIHF30N60E-GE3
DISTI # SIHF30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF30N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.1900
  • 2000:$3.0900
  • 4000:$2.8900
  • 6000:$2.7900
  • 10000:$2.7900
SIHF30N60E-GE3
DISTI # 19X1937		Vishay IntertechnologiesPower MOSFET, N Channel, 29 A, 600 V, 0.104 ohm, 10 V, 2 V RoHS Compliant: Yes1313
  • 1:$6.1700
  • 10:$5.1100
  • 25:$4.8100
  • 50:$4.5100
  • 100:$4.2100
  • 500:$3.6600
SIHF30N60E-GE3
DISTI # 78-SIHF30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		470
  • 1:$6.1700
  • 10:$5.1100
  • 100:$4.2100
  • 250:$4.0800
  • 500:$3.6600
SIHF30N60E-E3
DISTI # 781-SIHF30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		195
  • 1:$6.1700
  • 10:$5.1100
  • 100:$4.2100
SIHF30N60E-GE3
DISTI # 9034490P		Vishay IntertechnologiesMOSFET 600V 29A E SERIES TO-220FP, TU996
  • 10:£4.1700
  • 40:£3.6500
  • 100:£3.4100
  • 200:£3.2550
SIHF30N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 1000
    SIHF30N60E-GE3
    DISTI # 2364079    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, TO-220FP
    RoHS: Compliant    		1713
    • 1:£4.7800
    • 10:£3.6900
    • 100:£3.2200
    • 250:£3.1200
    • 500:£2.8000
    SIHF30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF30N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      RoHS: Compliant      		Americas -
        SIHF30N60E-GE3
        DISTI # 2364079        		Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, TO-220FP
        RoHS: Compliant        		1313
        • 1:$9.7700
        • 10:$8.0900
        • 100:$6.6600
        • 250:$6.4600
        • 500:$5.8000
        Imagen Parte # Descripción
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3

        		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3-126

        		 IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de SIHF30N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,18 US$
        4,18 US$
        10
        3,98 US$
        39,76 US$
        100
        3,77 US$
        376,65 US$
        500
        3,56 US$
        1 778,65 US$
        1000
        3,35 US$
        3 348,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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