S29GL01GS10TFA023

S29GL01GS10TFA023
Mfr. #:
S29GL01GS10TFA023
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash IC 1 Gb FLASH MEMORY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS10TFA023 Ficha de datos
Entrega:
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ECAD Model:
Más información:
S29GL01GS10TFA023 más información S29GL01GS10TFA023 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Serie:
S29GL01G/512/256/128S
Calificación:
AEC-Q100
Embalaje:
Carrete
Tipo de memoria:
NI
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit Eclipse
Tags
S29GL01GS10TFA, S29GL01GS10T, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 1 GB FLASH MEMORY
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descripción Valores Precio
S29GL01GS10TFA023
DISTI # S29GL01GS10TFA023-ND
Cypress SemiconductorIC 1 GB FLASH MEMORY
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$10.0749
S29GL01GS10TFA023
DISTI # 727-S29GL01GS10TF023
Cypress SemiconductorNOR Flash IC 1 Gb FLASH MEMORY
RoHS: Compliant
0
  • 1000:$10.2000
Imagen Parte # Descripción
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Mfr.#: S29GL01GS11FAIV20

OMO.#: OMO-S29GL01GS11FAIV20

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OMO.#: OMO-S29GL01GS11DHIV10

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Mfr.#: S29GL01GS10FHSS13

OMO.#: OMO-S29GL01GS10FHSS13

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S29GL01GT10DHA023

Mfr.#: S29GL01GT10DHA023

OMO.#: OMO-S29GL01GT10DHA023

NOR Flash IC 1 Gb FLASH MEMORY
S29GL01GS10TFA020

Mfr.#: S29GL01GS10TFA020

OMO.#: OMO-S29GL01GS10TFA020-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GS10DHI023

Mfr.#: S29GL01GS10DHI023

OMO.#: OMO-S29GL01GS10DHI023-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GS11TFB010

Mfr.#: S29GL01GS11TFB010

OMO.#: OMO-S29GL01GS11TFB010-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29GL01GS10DHSS40

Mfr.#: S29GL01GS10DHSS40

OMO.#: OMO-S29GL01GS10DHSS40-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GP11TFCR1

Mfr.#: S29GL01GP11TFCR1

OMO.#: OMO-S29GL01GP11TFCR1-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de S29GL01GS10TFA023 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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