S29GL01GS11TFB010

S29GL01GS11TFB010
Mfr. #:
S29GL01GS11TFB010
Fabricante:
Cypress Semiconductor
Descripción:
Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS11TFB010 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
S29GL01GS11TFB010 más información S29GL01GS11TFB010 Product Details
Atributo del producto
Valor de atributo
Fabricante
Cypress Semiconductor Corp
categoria de producto
Memoria
Serie
GL-S
embalaje
Bandeja
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSOP-56
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
2.7 V ~ 3.6 V
Paquete de dispositivo de proveedor
56-TSOP
Tamaño de la memoria
1G (64M x 16)
Tipo de memoria
FLASH - NOR
Velocidad
110ns
Arquitectura
MirrorBit Eclipse
Formato de memoria
DESTELLO
Estándar
Common Flash Interface (CFI)
Tipo de interfaz
Parallel
Organización
128 M x 8
Suministro-Corriente-Máx.
100 mA
Ancho de bus de datos
8 bit
Suministro-Voltaje-Máx.
3.6 V
Suministro-Voltaje-Mín.
2.7 V
Tipo de tiempo
Asincrónico
Tags
S29GL01GS11TFB01, S29GL01GS11TFB, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
NOR Flash Parallel 3V 1Gbit 64M x 16Bit 110ns 56-Pin TSOP Tray
***i-Key
IC FLASH 1G PARALLEL 56TSOP
***ark
TRAY PKGED / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descripción Valores Precio
S29GL01GS11TFB010
DISTI # S29GL01GS11TFB010-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 91
Container: Tray
Temporarily Out of Stock
  • 91:$13.9974
S29GL01GS11TFB010
DISTI # 727-S29GL01GS11TFB01
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 91:$14.0800
  • 273:$12.8300
  • 546:$12.0100
S29GL01GS11TFB010YZK000
DISTI # 727-S29GL01GS11TFB00
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 91:$12.2400
  • 273:$11.1600
  • 546:$10.4400
Imagen Parte # Descripción
S29GL01GS11DHSS20

Mfr.#: S29GL01GS11DHSS20

OMO.#: OMO-S29GL01GS11DHSS20

NOR Flash Nor
S29GL01GT12DHVV10

Mfr.#: S29GL01GT12DHVV10

OMO.#: OMO-S29GL01GT12DHVV10

NOR Flash NOR
S29GL01GS10DHI013

Mfr.#: S29GL01GS10DHI013

OMO.#: OMO-S29GL01GS10DHI013

NOR Flash Nor
S29GL01GS11DHSS10

Mfr.#: S29GL01GS11DHSS10

OMO.#: OMO-S29GL01GS11DHSS10

NOR Flash Nor
S29GL01GS10DHA023

Mfr.#: S29GL01GS10DHA023

OMO.#: OMO-S29GL01GS10DHA023

NOR Flash Nor
S29GL01GT10TFA013

Mfr.#: S29GL01GT10TFA013

OMO.#: OMO-S29GL01GT10TFA013

NOR Flash Nor
S29GL01GT11DHAV23

Mfr.#: S29GL01GT11DHAV23

OMO.#: OMO-S29GL01GT11DHAV23-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GS11TFV020

Mfr.#: S29GL01GS11TFV020

OMO.#: OMO-S29GL01GS11TFV020-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
S29GL01GS11DHB010

Mfr.#: S29GL01GS11DHB010

OMO.#: OMO-S29GL01GS11DHB010-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA Automotive, AEC-Q100, GL-S
S29GL01GP10TFIV10

Mfr.#: S29GL01GP10TFIV10

OMO.#: OMO-S29GL01GP10TFIV10-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de S29GL01GS11TFB010 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
18,02 US$
18,02 US$
10
17,11 US$
171,14 US$
100
16,21 US$
1 621,35 US$
500
15,31 US$
7 656,40 US$
1000
14,41 US$
14 412,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • Super Capacitors
    Better-than-industry standard ESR ratings in the surface-mount FC series. Wider temperature ranges in the snap-in FT series. Radial HVZ series boasts capacitance values up to 100°F.
  • Compare S29GL01GS11TFB010
    S29GL01GS11TFB010 vs S29GL01GS11TFB010YZK000 vs S29GL01GS11TFB010YZK001
  • CY8CKIT-141 PSoC 4 BLE SMA Module
    Cypress Semiconductor's CY8CKIT-141 PSoC 4 BLE SMA Module is an easy-to-use solution for designing and testing complete Bluetooth® low energy systems.
  • WOI Series Wireless Operator Interface
    Honeywell's WOI series offers the ability to be used in conjunction with Limitless™ switches configured on a single Limitless™ receiver.
  • FM24V02A 256 Kbit Serial I²C F-RAM
    Cypress' FM24V02A F-RAM is nonvolatile and performs reads and writes similar to a RAM, providing reliable data retention for 151 years.
  • HK Series Inductors
    TAIYO YUDEN's HK series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
Top