S29GL01GS11FAIV20

S29GL01GS11FAIV20
Mfr. #:
S29GL01GS11FAIV20
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash Nor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS11FAIV20 Ficha de datos
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HTML Datasheet:
S29GL01GS11FAIV20 DatasheetS29GL01GS11FAIV20 Datasheet (P4-P6)S29GL01GS11FAIV20 Datasheet (P7)
ECAD Model:
Más información:
S29GL01GS11FAIV20 más información S29GL01GS11FAIV20 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
FBGA-64
Serie:
S29GL01G/512/256/128S
Tamaño de la memoria:
1 Gbit
Tipo de interfaz:
Parallel
Organización:
128 M x 8
Tipo de tiempo:
Asincrónico
Ancho del bus de datos:
8 bit
Voltaje de suministro - Min:
2.7 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
100 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Embalaje:
Bandeja
Tipo de memoria:
NI
Velocidad:
110 ns
Arquitectura:
MirrorBit Eclipse
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Estándar:
Common Flash Interface (CFI)
Cantidad de paquete de fábrica:
180
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit Eclipse
Tags
S29GL01GS11FA, S29GL01GS11F, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, FBGA-64
***ark
Tray Pkged / 1G Bit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Lowest Address Sector Protected
***ure Electronics
S29GL01GS Series 3.6 V 1 Gb (64 M x 16) 110ns SMT Parallel Flash - FBGA-64
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 90 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL128P Series 128 Mb (16M x 8) 3 V 90 ns Flash-NOR Memory - BGA-64
***et
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray
***ark
IC, FLASH MEM, 128MBIT, 90NS, 64-BGA; Memory Type:Flash - NOR; Memory Size:128Mbit; Memory Configuration:-; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:90ns; MSL:- ;RoHS Compliant: Yes
***ical
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL256P Series 256 Mb (32M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64
***nell
MEMORY, FLASH, 256MBIT, 64FBGA; Memory Type:Flash; Memory Size:256Mbit; Memory Configuration:(Not Applicable); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
***p One Stop
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 Mb (32 M x 8) 3.6 V Surface Mount Mirrorbit® Flash - FBGA-64
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descripción Valores Precio
S29GL01GS11FAIV20
DISTI # S29GL01GS11FAIV20-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 180
Container: Tray
Temporarily Out of Stock
  • 180:$8.8898
S29GL01GS11FAIV20
DISTI # 51Y1545
Cypress SemiconductorTRAY PKGED / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED0
  • 1:$8.4400
  • 10:$8.0900
  • 25:$7.8500
  • 50:$7.6700
  • 100:$7.5600
  • 200:$7.3800
  • 1000:$7.3200
S29GL01GS11FAIV20
DISTI # 727-S29GL01GS11FAIV2
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
5
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
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Disponibilidad
Valores:
118
En orden:
2101
Ingrese la cantidad:
El precio actual de S29GL01GS11FAIV20 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,98 US$
12,98 US$
10
11,80 US$
118,00 US$
25
10,92 US$
273,00 US$
50
10,03 US$
501,50 US$
250
9,14 US$
2 285,00 US$
500
8,55 US$
4 275,00 US$
1000
7,85 US$
7 850,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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