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SI1058X-T1-E3

SI1058X-T1-E3
Mfr. #:
SI1058X-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1058X-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1058X-T1-E3 DatasheetSI1058X-T1-E3 Datasheet (P4-P6)SI1058X-T1-E3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI1
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI1058X-E3
Unidad de peso:
0.001129 oz
Tags
SI105, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 20V 1.3A SOT563F
***ark
MOSFET, N, SC-89; Transistor type:MOSFET; Voltage, Vds typ:20V; Current, Id cont:1.3A; Resistance, Rds on:0.091R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:1.55V; Case style:SC-89-6; Base number:1058; Charge, gate RoHS Compliant: Yes
***nell
MOSFET, N, SC-89; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.3A; Resistance, Rds On:0.091ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.55V; Case Style:SC-89; Termination Type:SMD; Base Number:1058; Current, Idm Pulse:6A; N-channel Gate Charge:3.5nC; No. of Pins:6; Power Dissipation:0.236mW; Power, Pd:0.236W; Resistance, Rds on @ Vgs = 2.5V:0.124ohm; Resistance, Rds on @ Vgs = 4.5V:0.091ohm; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.55V; Voltage, Vgs th Min:0.7V
Parte # Mfg. Descripción Valores Precio
SI1058X-T1-E3
DISTI # SI1058X-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 1.3A SOT563F
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1058X-T1-E3
    DISTI # SI1058X-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 1.3A SOT563F
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI1058X-T1-E3
      DISTI # SI1058X-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 20V 1.3A SOT563F
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI1058X-T1-E3
        DISTI # 781-SI1058X-T1-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          SI1058X-T1-GE3

          Mfr.#: SI1058X-T1-GE3

          OMO.#: OMO-SI1058X-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3
          SI1058X-T1-E3

          Mfr.#: SI1058X-T1-E3

          OMO.#: OMO-SI1058X-T1-E3

          		 MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3
          SI1058X-T1-GE3

          Mfr.#: SI1058X-T1-GE3

          OMO.#: OMO-SI1058X-T1-GE3-VISHAY

          		 MOSFET N-CH 20V SC89
          SI1058X-T1-E3

          Mfr.#: SI1058X-T1-E3

          OMO.#: OMO-SI1058X-T1-E3-VISHAY

          		 MOSFET N-CH 20V 1.3A SOT563F
          Disponibilidad
          Valores:
          Available
          En orden:
          2500
          Ingrese la cantidad:
          El precio actual de SI1058X-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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