 | | | |
| PartNumber | SI1050X-T1-GE3 | SI1050X-T1-E3 | SI1051X-T1-E3 |
| Description | MOSFET 8V Vds 5V Vgs SC89-6 | MOSFET RECOMMENDED ALT 781-SI1050X-GE3 | MOSFET RECOMMENDED ALT 78-SI1077X-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SC-89-6 | - | SC-89-6 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Id Continuous Drain Current | 1.34 A | - | - |
| Rds On Drain Source Resistance | 86 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 7.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 236 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI1 | SI1 | SI1 |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 4.12 S | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 6.8 ns | - | - |
| Part # Aliases | SI1050X-GE3 | SI1050X-E3 | SI1051X-E3 |
| Unit Weight | 0.001129 oz | 0.001129 oz | 0.001129 oz |
| Height | - | - | 0.6 mm |
| Length | - | - | 1.66 mm |
| Width | - | - | 1.2 mm |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1050X-T1-GE3 | MOSFET 8V Vds 5V Vgs SC89-6 | |
| SI1051X-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI1077X-T1-GE3 | ||
| SI1054X-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3 | ||
| SI1058X-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3 | ||
| SI1058X-T1-E3 | MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3 | ||
| SI1050X-T1-E3 | MOSFET RECOMMENDED ALT 781-SI1050X-GE3 | ||
| SI1051X-T1-E3 | MOSFET RECOMMENDED ALT 78-SI1077X-T1-GE3 | ||
| SI1056X-T1-E3 | MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3 | ||
| SI1050G | Nuevo y original | ||
| SI1050GS | Nuevo y original | ||
| SI1050VISHAY | Nuevo y original | ||
| SI1054A | Nuevo y original | ||
Vishay |
SI1050X-T1-GE3 | MOSFET N-CH 8V 1.34A SC-89-6 | |
| SI1054X-T1-E3 | MOSFET N-CH 12V 1.32A SC89-6 | ||
| SI1054X-T1-GE3 | MOSFET N-CH 12V 1.32A SC89-6 | ||
| SI1056X-T1-GE3 | MOSFET N-CH 20V SC-89-6 | ||
| SI1051X-T1-GE3 | RF Bipolar Transistors MOSFET 8.0V 1.2A 0.236W 122 mohms @ 4.5V | ||
| SI1050X-T1-E3 | MOSFET N-CH 8V 1.34A SOT563F | ||
| SI1056X-T1-E3 | MOSFET N-CH 20V 1.32A SOT563F | ||
| SI1058X-T1-GE3 | MOSFET N-CH 20V SC89 | ||
| SI1051X-T1-E3 | MOSFET P-CH 8V 1.2A SC89-6 | ||
| SI1058X-T1-E3 | MOSFET N-CH 20V 1.3A SOT563F |