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TC58NYG0S3HBAI6

TC58NYG0S3HBAI6
Mfr. #:
TC58NYG0S3HBAI6
Fabricante:
Toshiba Memory
Descripción:
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TC58NYG0S3HBAI6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TC58NYG0S3HBAI6 más información
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
Memoria
Serie
-
embalaje
Bandeja
Paquete-Estuche
67-VFBGA
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
1.7 V ~ 1.95 V
Paquete de dispositivo de proveedor
67-VFBGA (6.5x8)
Tamaño de la memoria
1G (128M x 8)
Tipo de memoria
EEPROM - NAND
Velocidad
25ns
Formato de memoria
EEPROM - Serie
Tags
TC58NYG0, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***v
    V***v
    RU

    Ok

    2019-08-08
    V***o
    V***o
    RU

    Can't answer

    2019-05-01
    F***a
    F***a
    CZ

    Perfect product. I recommend.

    2019-06-29
    A***n
    A***n
    NG

    Well packaged. Fast shipping.

    2019-08-23
***akorn
NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 1GBIT 25NS 67VFBGA
***et
1Gbit, generation: 24nm, VCC=1.7 to 1.95V
***S
vpe: 253/tray/bga
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Parte # Mfg. Descripción Valores Precio
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6-ND		Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 338
Container: Tray		Temporarily Out of Stock
  • 338:$2.8107
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6		Toshiba America Electronic Components1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray		Americas - 0
  • 338:$2.1900
  • 676:$2.1900
  • 1352:$2.0900
  • 2028:$2.0900
  • 3380:$2.0900
TC58NYG0S3HBAI6
DISTI # 757-TC58NYG0S3HBAI6		Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant		338
  • 1:$3.0600
  • 10:$2.7500
  • 50:$2.7000
  • 100:$2.4100
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
  • 2500:$2.1300
Imagen Parte # Descripción
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4

 NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4

 NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4-1151

 SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4)
TC58NYG1S8EBAI4

Mfr.#: TC58NYG1S8EBAI4

OMO.#: OMO-TC58NYG1S8EBAI4-1190

 Nuevo y original
TC58NYG3S0FBAID

Mfr.#: TC58NYG3S0FBAID

OMO.#: OMO-TC58NYG3S0FBAID-1190

 Nuevo y original
TC58NYGOS3EBA14

Mfr.#: TC58NYGOS3EBA14

OMO.#: OMO-TC58NYGOS3EBA14-1190

 Nuevo y original
TC58NYG2S0HBAI6

Mfr.#: TC58NYG2S0HBAI6

OMO.#: OMO-TC58NYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA

 EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

 EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4-TOSHIBA-MEMORY-AMERICA

 Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG2S0HBAI4-ND

Mfr.#: TC58NYG2S0HBAI4-ND

OMO.#: OMO-TC58NYG2S0HBAI4-ND-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de TC58NYG0S3HBAI6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,24 US$
2,24 US$
10
2,12 US$
21,23 US$
100
2,01 US$
201,15 US$
500
1,90 US$
949,90 US$
1000
1,79 US$
1 788,00 US$
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