TC58NYG2S0HBAI6

TC58NYG2S0HBAI6
Mfr. #:
TC58NYG2S0HBAI6
Fabricante:
Toshiba Memory
Descripción:
EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TC58NYG2S0HBAI6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TC58NYG2S0HBAI6 más información
Atributo del producto
Valor de atributo
Fabricante
Toshiba Semiconductor y almacenamiento
categoria de producto
Memoria
Serie
-
embalaje
Bandeja
Paquete-Estuche
67-VFBGA
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
1.7 V ~ 1.95 V
Paquete de dispositivo de proveedor
67-VFBGA (6.5x8)
Tamaño de la memoria
4G (512M x 8)
Tipo de memoria
EEPROM - NAND
Velocidad
25ns
Formato de memoria
EEPROM - Serie
Tags
TC58NYG2S0H, TC58NYG2S0, TC58NYG2, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**f
    E**f
    RU

    Delivery 65 days. Put it in the mailbox.

    2019-05-07
    S***s
    S***s
    NO

    A+

    2019-07-27
***ical
NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 4GBIT 25NS 67FBGA
***et
4Gbit, generation: 24nm, VCC=1.7 to 1.95V
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Parte # Mfg. Descripción Valores Precio
TC58NYG2S0HBAI6
DISTI # V99:2348_18852635
Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA26
  • 2500:$3.2660
  • 1000:$3.2780
  • 500:$3.4360
  • 250:$3.5660
  • 100:$3.5750
  • 50:$3.9590
  • 25:$3.9770
  • 10:$4.0590
  • 1:$4.4450
TC58NYG2S0HBAI6
DISTI # TC58NYG2S0HBAI6
Toshiba America Electronic Components4Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG2S0HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 3380:$2.4900
  • 2028:$2.5900
  • 676:$2.6900
  • 1352:$2.6900
  • 338:$2.7900
TC58NYG2S0HBAI6_TRAY
DISTI # TC58NYG2S0HBAI6_TRAY
Toshiba America Electronic ComponentsNAND Flash Memory (Alt: TC58NYG2S0HBAI6_TRAY)
RoHS: Compliant
Min Qty: 1
Europe - 0
    TC58NYG2S0HBAI6
    DISTI # 757-TC58NYG2S0HBAI6
    Toshiba America Electronic ComponentsNAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    RoHS: Compliant
    336
    • 1:$4.5900
    • 10:$4.1600
    • 25:$4.0700
    • 50:$4.0500
    • 100:$3.6300
    • 250:$3.6200
    • 500:$3.4800
    • 1000:$3.3100
    • 2500:$3.1600
    Imagen Parte # Descripción
    TC58NYG2S0HBAI4

    Mfr.#: TC58NYG2S0HBAI4

    OMO.#: OMO-TC58NYG2S0HBAI4

    NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
    TC58NYG0S3EBAI4

    Mfr.#: TC58NYG0S3EBAI4

    OMO.#: OMO-TC58NYG0S3EBAI4

    NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM)
    TC58NYG0S3EBAI4

    Mfr.#: TC58NYG0S3EBAI4

    OMO.#: OMO-TC58NYG0S3EBAI4-1151

    SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4)
    TC58NYG1S3HBAI4_TRAY

    Mfr.#: TC58NYG1S3HBAI4_TRAY

    OMO.#: OMO-TC58NYG1S3HBAI4-TRAY-1190

    Nuevo y original
    TC58NYG1S8EBAI4

    Mfr.#: TC58NYG1S8EBAI4

    OMO.#: OMO-TC58NYG1S8EBAI4-1190

    Nuevo y original
    TC58NYG2S0FBAI4

    Mfr.#: TC58NYG2S0FBAI4

    OMO.#: OMO-TC58NYG2S0FBAI4-1190

    Nuevo y original
    TC58NYG2S3ETAI0B3H

    Mfr.#: TC58NYG2S3ETAI0B3H

    OMO.#: OMO-TC58NYG2S3ETAI0B3H-1190

    Nuevo y original
    TC58NYG2S3ETAIO

    Mfr.#: TC58NYG2S3ETAIO

    OMO.#: OMO-TC58NYG2S3ETAIO-1190

    Nuevo y original
    TC58NYG1S3HBAI6

    Mfr.#: TC58NYG1S3HBAI6

    OMO.#: OMO-TC58NYG1S3HBAI6-TOSHIBA-MEMORY-AMERICA

    EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
    TC58NYG1S3HBAI6-ND

    Mfr.#: TC58NYG1S3HBAI6-ND

    OMO.#: OMO-TC58NYG1S3HBAI6-ND-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de TC58NYG2S0HBAI6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,92 US$
    4,92 US$
    10
    4,68 US$
    46,75 US$
    100
    4,43 US$
    442,94 US$
    500
    4,18 US$
    2 091,65 US$
    1000
    3,94 US$
    3 937,20 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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