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IPD80R1K0CEATMA1

IPD80R1K0CEATMA1
Mfr. #:
IPD80R1K0CEATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 800V 5.7A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD80R1K0CEATMA1 Ficha de datos
Entrega:
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Pago:
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Más información:
IPD80R1K0CEATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPD80R1
embalaje
Carrete
Alias ​​de parte
IPD80R1K0CE SP001130974
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
83 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
5.7 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
800 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
72 ns
Tiempo de retardo de encendido típico
25 ns
Qg-Gate-Charge
31 nC
Tags
IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
***p One Stop Japan
Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO252-3, RoHS
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Parte # Mfg. Descripción Valores Precio
IPD80R1K0CEATMA1
DISTI # V72:2272_06383396		Infineon Technologies AGTrans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1913
  • 1000:$0.6195
  • 500:$0.7917
  • 250:$0.9043
  • 100:$0.9414
  • 25:$1.0984
  • 10:$1.2205
  • 1:$1.5682
IPD80R1K0CEATMA1
DISTI # V36:1790_06383396		Infineon Technologies AGTrans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.5123
  • 1250000:$0.5127
  • 250000:$0.5501
  • 25000:$0.6208
  • 2500:$0.6329
IPD80R1K0CEATMA1
DISTI # IPD80R1K0CEATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2117In Stock
  • 1000:$0.7135
  • 500:$0.9037
  • 100:$1.0940
  • 10:$1.4030
  • 1:$1.5700
IPD80R1K0CEATMA1
DISTI # IPD80R1K0CEATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2117In Stock
  • 1000:$0.7135
  • 500:$0.9037
  • 100:$1.0940
  • 10:$1.4030
  • 1:$1.5700
IPD80R1K0CEATMA1
DISTI # IPD80R1K0CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.5911
  • 5000:$0.6142
  • 2500:$0.6465
IPD80R1K0CEATMA1
DISTI # 33632580		Infineon Technologies AGTrans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.5508
IPD80R1K0CEATMA1
DISTI # 29716466		Infineon Technologies AGTrans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1913
  • 12:$1.5682
IPD80R1K0CEATMA1
DISTI # IPD80R1K0CEATMA1		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K0CEATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 2500
  • 25000:$0.5579
  • 15000:$0.5679
  • 10000:$0.5879
  • 5000:$0.6099
  • 2500:$0.6329
IPD80R1K0CEATMA1
DISTI # SP001130974		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001130974)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5229
  • 15000:€0.5629
  • 10000:€0.6099
  • 5000:€0.6649
  • 2500:€0.8129
IPD80R1K0CEATMA1
DISTI # 97Y1825		Infineon Technologies AGMOSFET, N-CH, 800V, 5.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes2500
  • 1000:$0.6670
  • 500:$0.8440
  • 250:$0.9000
  • 100:$0.9550
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.4500
IPD80R1K0CEATMA1
DISTI # 726-IPD80R1K0CEATMA1		Infineon Technologies AGMOSFET N-Ch 800V 5.7A DPAK-2
RoHS: Compliant		6199
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9460
  • 500:$0.8360
  • 1000:$0.6600
IPD80R1K0CEATMA1
DISTI # 9140223P		Infineon Technologies AGMOSFET N-CHANNEL 800V 18A COOLMOS TO252, RL6740
  • 500:£0.5900
  • 200:£0.6450
  • 50:£0.7310
IPD80R1K0CEATMA1
DISTI # 2617465		Infineon Technologies AGMOSFET, N-CH, 800V, 5.7A, TO-252-32558
  • 500:£0.6440
  • 250:£0.6870
  • 100:£0.7290
  • 10:£0.9970
  • 1:£1.2600
IPD80R1K0CEATMA1
DISTI # 2617465		Infineon Technologies AGMOSFET, N-CH, 800V, 5.7A, TO-252-3
RoHS: Compliant		33
  • 1000:$1.0800
  • 500:$1.3700
  • 100:$1.6500
  • 10:$2.1200
  • 1:$2.3700
Imagen Parte # Descripción
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K2P7ATMA1-CUT TAPE

Mfr.#: IPD80R1K2P7ATMA1-CUT TAPE

OMO.#: OMO-IPD80R1K2P7ATMA1-CUT-TAPE-1190

 Nuevo y original
IPD80R1K0CEATMA1/INFINEO

Mfr.#: IPD80R1K0CEATMA1/INFINEO

OMO.#: OMO-IPD80R1K0CEATMA1-INFINEO-1190

 Nuevo y original
IPD80R1K0CEBTMA1 , 2SD24

Mfr.#: IPD80R1K0CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190

 Nuevo y original
IPD80R1K2P7ATMA1

Mfr.#: IPD80R1K2P7ATMA1

OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 4.5A TO252-3
IPD80R1K4CE

Mfr.#: IPD80R1K4CE

OMO.#: OMO-IPD80R1K4CE-1190

 Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
IPD80R1K4CEATMA1 , 2SD24

Mfr.#: IPD80R1K4CEATMA1 , 2SD24

OMO.#: OMO-IPD80R1K4CEATMA1-2SD24-1190

 Nuevo y original
IPD80R1K0CEBTMA1

Mfr.#: IPD80R1K0CEBTMA1

OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 5.7A DPAK-2
IPD80R1K4CEBTMA1

Mfr.#: IPD80R1K4CEBTMA1

OMO.#: OMO-IPD80R1K4CEBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 3.9A DPAK-2
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPD80R1K0CEATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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